Display device

ABSTRACT

A display panel for displaying an image is provided with a plurality of pixels arranged in a matrix. Each pixel includes one or more units each including a plurality of subunits. Each subunit includes a transistor in which an oxide semiconductor layer which is provided so as to overlap a gate electrode with a gate insulating layer interposed therebetween, a pixel electrode which drives liquid crystal connected to a source or a drain of the transistor, a counter electrode which is provided so as to face the pixel electrode, and a liquid crystal layer provided between the pixel electrode and the counter electrode. In the display panel, a transistor whose off current is lower than 10 zA/μm at room temperature per micrometer of the channel width and off current of the transistor at 85° C. can be lower than 100 zA/μm per micrometer in the channel width.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.14/505,593, filed Oct. 3, 2014, now allowed, which is a continuation ofU.S. application Ser. No. 13/011,535, filed Jan. 21, 2011, now U.S. Pat.No. 8,879,010, which claims the benefit of a foreign priorityapplication filed in Japan as Serial No. 2010-012665 on Jan. 24, 2010,all of which are incorporated by reference.

TECHNICAL FIELD

One embodiment of the present invention relates to a display deviceincluding a field-effect transistor using an oxide semiconductor.

BACKGROUND ART

A liquid crystal display panel including a thin film transistor usingamorphous silicon as a driving element of liquid crystal is widely usedin commercial products such as a monitor of a computer and a liquidcrystal television. A manufacturing technique of a thin film transistorusing amorphous silicon is already established and a liquid crystalpanel with more than 60 inches has been produced.

Since operation speed of a thin film transistor using amorphous siliconis slow and any further high performance cannot be expected, a thin filmtransistor using polysilicon has been developed. However, acrystallization step is required for making polysilicon, which leads tocause variation in transistor characteristics or inhibit enlargement ofa panel area.

In contrast, an oxide semiconductor material has been attractingattention as a transistor material besides a silicon based material. Asan oxide semiconductor material, zinc oxide or a substance containingzinc oxide is known. Thin film transistors each of which is formed usingan amorphous oxide (an oxide semiconductor) having an electron carrierconcentration of lower than 10¹⁸/cm³ are disclosed (see Patent Documents1 to 3).

Liquid crystal display devices are widely used for display devicesranging from large-sized display devices such as television sets tosmall-sized display devices such as mobile phones. Therefore, thedevelopment of liquid crystal display devices is intended to achievelow-cost liquid crystal display devices and to provide high-value addedliquid crystal display devices as well as to achieve a wide viewingangle and high image quality. In addition, as high-value added liquidcrystal display devices, the development for low power consumption hasalso been underway.

In order to improve viewing angle characteristics of liquid crystaldisplay devices, in a liquid crystal display device which performsdisplay by aligning liquid crystal molecules in a gradient manner or aradical gradient manner, it is disclosed that one pixel is divided intoa plurality of independent pixel regions and different signals are addedto each divided pixel region in each given period (for example, seePatent Document 4).

Further, as a method for satisfying basic display quality such asbrightness and contrast and achieving sufficient low power consumption,a driving method of a display device in which a scanning period and anon-scanning period longer than the scanning period are set is disclosed(see Patent Document 5). Specifically, it is a driving method of adisplay device in which all data signal lines are electricallydisconnected from a data signal driver in a break period in which allscan lines and data signal lines are in a non-selection state, so that ahigh impedance state is obtained.

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2006-165527-   [Patent Document 2] Japanese Published Patent Application No.    2006-165528-   [Patent Document 3] Japanese Published Patent Application No.    2006-165529-   [Patent Document 4] Japanese Published Patent Application No.    2008-287042-   [Patent Document 5] Japanese Published Patent Application No.    2001-312253

DISCLOSURE OF INVENTION

Even when having an electron carrier concentration of lower than10¹⁸/cm³, an oxide semiconductor is a substantially n-type oxidesemiconductor, and an on-off ratio of the thin film transistorsdisclosed in the above Patent Documents is only 10³. A reason of suchlow on-off ratio of the thin film transistors is high off current.

For example, in a liquid crystal panel, each pixel includes a storagecapacitor provided in parallel to a pixel electrode driving liquidcrystal. A transistor is turned on to apply an image signal to the pixelelectrode and the storage capacitor, whereby potential is applied toliquid crystal and the storage capacitor is charged to given potential.When this writing operation is completed, the transistor is off untilthe next image signal is applied. At this time, when off current of thetransistor is high, potential applied to the liquid crystal isfluctuated and electrical charges stored in the storage capacitor aredischarged.

In a pixel, a relation between off current i of a transistor, anelectrostatic capacitance C, voltage fluctuation V, and a holding time Tcan be expressed by CV=iT. For example, when off current of a transistoris 0.1 pA, electrostatic capacitance of a storage capacitor is 0.1 pF,and one frame period is 16.6 ms, voltage fluctuation V of a pixel in oneframe becomes as follows:0.1 [pF]×V=0.1 [pA]×16.6 [ms]V=16.6 [mV]

In the case where the maximum driving voltage of liquid crystal is 5 Vand 256 grayscale is displayed, a grayscale voltage for 1 grayscale isapproximately 20 mV. When voltage fluctuation of a pixel is 16.6 mV asdescribed above, this corresponds to a grayscale voltage forapproximately 1 grayscale. Further, in the case where 1024 grayscale isdisplayed, a grayscale voltage for 1 grayscale is approximately 5 mV,and when voltage fluctuation of a pixel is 16.6 mV, this corresponds toa grayscale voltage for 4 grayscales and thus influence of voltagefluctuation due to off current cannot be ignored. Consequently, not onlycharacteristics of an on state (such as on current and field-effectmobility) but also influence of off current of a transistor included ina display panel must be considered.

In the liquid crystal display device disclosed in Patent Document 1, animage signal is not input to each pixel included in a pixel portion inthe inactive period. That is, a transistor for controlling the input ofan image signal is kept turned off for a long period of time while animage signal is held in each pixel. Thus, the effect that leakage of animage signal through the transistor has on display of each pixel becomesapparent. Specifically, voltage applied to a liquid crystal element isreduced, whereby display deterioration (change) of a pixel including theliquid crystal element becomes apparent.

Further, the amount of leakage of an image signal through the transistoris changed in accordance with operation temperature of the transistor.Specifically, the amount of leakage of an image signal through thetransistor is increased along with an increase in the operationtemperature. Therefore, it is difficult for the liquid crystal displaydevice disclosed in Patent Document 1 to maintain uniform displayquality when being used in the outdoors where environments vary widely.

As described above, by simply using a transistor formed using an oxidesemiconductor, it is difficult to achieve low power consumption and highimage quality including improvement of a viewing angle. Thus, an objectof one embodiment of the present invention is to reduce powerconsumption of a display device and suppress deterioration of display(reduction in display quality) as well as to achieve high image qualityin a display device.

One embodiment of the present invention provides a display device havinghigh image quality and low power consumption by using a transistor whoseoff current is reduced to an extremely low level. In order to reduce offcurrent of a transistor, a semiconductor material whose width of aforbidden band (a band gap) is greater than that of a siliconsemiconductor is used for forming a transistor, preferably theconcentration of an impurity which serves as a carrier donor of thesemiconductor material is reduced, in one embodiment of the presentinvention. Therefore, an oxide semiconductor whose energy gap is greaterthan or equal to 2 eV, preferably greater than or equal to 2.5 eV, morepreferably greater than or equal to 3 eV is used for a semiconductorlayer of a transistor (a layer forming a channel formation region) toreduce the concentration of an impurity which serves as a carrier donorincluded in the oxide semiconductor. Consequently, the off current ofthe transistor per micrometer of channel width can be reduced to lowerthan 10 zA/μm at room temperature and lower than 100 zA/μm at 85° C.,which is an extremely low level.

As one mode of a transistor using an oxide semiconductor, a sourceelectrode and a drain electrode part of which are formed of metalnitride are included, in addition to the above oxide semiconductorlayer. A gate electrode of the transistor may be provided on a lowerside (a substrate side), an upper side (the side opposite to thesubstrate side), or both sides of the oxide semiconductor layer with aninsulating layer interposed therebetween. Further, a transistor whosemaximum value of field-effect mobility is greater than or equal to 5cm²/Vsec, preferably in the range of 10 cm²/Vsec to 150 cm²/Vsec in anon state, in addition to the characteristics of offstate is used. Thisis because by increasing the operation speed of the transistor, writingoperation or the like can be performed sufficiently even when density ofa pixel is increased.

One embodiment of the present invention is a display device providedwith a display panel in which pixels are provided in a matrix to displayan image. Each pixel includes one or more unit. Each unit includes aplurality of subunits each of which includes a transistor where a gateelectrode is provided to overlap with an oxide semiconductor layer witha gate insulating layer interposed therebetween, a pixel electrode whichis connected to a source or drain side of the transistor and drivesliquid crystal, a counter electrode provided so as to face the pixelelectrode, and a liquid crystal layer provided between the pixelelectrode and the counter electrode.

One embodiment of the present invention is a display device providedwith a display panel which includes: a pixel portion in which pixels areprovided in a matrix to display an image, each pixel including one ormore units, each unit including a plurality of subunits each of whichincludes a transistor where a gate electrode is provided to overlap withan oxide semiconductor layer with a gate insulating layer interposedtherebetween, a pixel electrode which is connected to a source or drainside of the transistor and drives liquid crystal, a counter electrodeprovided so as to face the pixel electrode, and a liquid crystal layerprovided between the pixel electrode and the counter electrode; and adriver circuit portion which drives the pixel portion to display animage on a screen. The driver circuit portion has a function to performa writing operation in which an image signal is written successively toa selected pixel to display an image. Such a function is achieved byusing the above transistor.

One embodiment of the present invention is a display device providedwith a display panel which includes: a pixel portion in which pixels areprovided in a matrix to display an image, each pixel including one ormore units, each unit including a plurality of subunits each of whichincludes a transistor where a gate electrode is provided to overlap withan oxide semiconductor layer with a gate insulating layer interposedtherebetween, a pixel electrode which is connected to a source or drainside of the transistor and drives liquid crystal, a counter electrodeprovided so as to face the pixel electrode, and a liquid crystal layerprovided between the pixel electrode and the counter electrode; and adriver circuit portion which drives the pixel portion to display animage on a screen. The driver circuit portion has a function to selectan operation mode in which a writing operation is performed in which animage signal is written successively to a selected pixel to display animage and an operation mode in which operation of writing an imagesignal is stopped and a written image on the screen is held in the casewhere one image is displayed on the screen. Such a function is achievedby using the above transistor.

According to one embodiment of the present invention, a signal voltageapplied to a pixel can be held stably by using a transistor whose offcurrent is satisfactorily reduced. Consequently, a signal input to thepixel can be kept in a given state (the state in which an image signalis written), so that an image can be displayed stably.

According to one embodiment of the present invention, as a transistorprovided in each pixel, a transistor whose channel formation region isformed using an oxide semiconductor layer is employed. When the oxidesemiconductor layer is highly purified, off current of the transistor atroom temperature can be lower than 10 zA/μm per micrometer of thechannel width and off current of the transistor at 85° C. can be lowerthan 100 zA/μm per micrometer of the channel width. Therefore, theamount of leakage of an image signal through the transistor can bereduced. That is, display deterioration (change) which occurs when thewriting frequency of an image signal to a pixel including the transistoris reduced can be suppressed. Thus, power consumption of the liquidcrystal display device can be reduced and display deterioration(reduction in display quality) can be suppressed.

Further, a pixel including a transistor whose off current is extremelyreduced can maintain a constant state (a state in which an image signalis written), and thus can operate stably even in the case where a stillimage is displayed. In that case, since an increase in off current withan increase in operation temperature is small in the transistor, adverseeffect that an external factor such as temperature has on leakage of animage signal in the pixel can be reduced. That is, the liquid crystaldisplay device can suppress display deterioration (reduction in displayquality) even when a still image is displayed by maintaining a state inwhich an image signal is written in the outdoors or the like whereenvironments vary widely.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1 is a block diagram illustrating a structure of a liquid crystaldisplay device according to Embodiment 1;

FIG. 2 is a block diagram illustrating a structure of a liquid crystaldisplay device according to Embodiment 1;

FIG. 3 is a diagram illustrating a structure of a driver circuit and apixel of a liquid crystal display device according to Embodiment 1;

FIG. 4 is a timing chart illustrating operation of a liquid crystaldisplay device according to Embodiment 1;

FIGS. 5A and 5B are timing charts illustrating operation of a displaycontrol circuit of a liquid crystal display device according toEmbodiment 1;

FIG. 6 is a chart schematically showing the frequency of writing animage signal in a period in which a moving image is displayed and aperiod in which a still image is displayed;

FIG. 7 is a block diagram illustrating a structure of a liquid crystaldisplay device according to Embodiment 1;

FIGS. 8A and 8B are diagrams illustrating a structure of a televisionset according to Embodiment 2;

FIGS. 9A and 9B are diagrams illustrating a structure of a monitoraccording to Embodiment 2;

FIGS. 10A to 10C are diagrams illustrating an example of a structure ofa backlight of a liquid crystal display device;

FIGS. 11A to 11C are diagrams illustrating an example of a structure ofa backlight of a liquid crystal display device;

FIGS. 12A to 12D are diagrams each illustrating an example of atransistor which can be applied to a liquid crystal display device;

FIGS. 13A to 13E are diagrams illustrating a transistor including anoxide semiconductor layer and a manufacturing method thereof;

FIG. 14 is a graph showing an example of V_(g)-I_(d) characteristics ofa transistor formed using an oxide semiconductor;

FIG. 15 is a graph for showing characteristics of an off state, inV_(g)-I_(d) characteristics of a transistor formed using an oxidesemiconductor;

FIG. 16 is a graph showing a relation between source-drain voltage V andoff current I;

FIGS. 17A and 17B are diagrams illustrating an example of a device whichshows a 3D image which is a moving image or a still image with dedicatedglasses with which an image of the display device is synchronized;

FIGS. 18A and 18B are diagrams illustrating an example of an electronicbook reader according to the present invention;

FIG. 19 is a diagram illustrating an example of a computer according tothe present invention;

FIG. 20 is a plan view illustrating an example of a pixel of a liquidcrystal display device; and

FIG. 21 is a cross-sectional view illustrating an example of a pixel ofa liquid crystal display device.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention are described below with referenceto the accompanying drawings. However, the invention disclosed in thisspecification is not limited to the following description, and it iseasily understood by those skilled in the art that modes and details canbe variously changed without departing from the purpose and the scope ofthe present invention. Therefore, the invention disclosed in thisspecification should not be interpreted as being limited to thefollowing description of the embodiments.

In the case where description is made with reference to drawings inembodiments, reference numerals are used to denote the same componentsin different drawings in some cases. Note that components illustrated inthe drawings, that is, a thickness or a width of a layer, a region, orthe like, a relative position, and the like are exaggerated in somecases for clarification in description of embodiments.

Embodiment 1

In this embodiment, one mode of a liquid crystal display device and adriving method of the liquid crystal display device are described withreference to FIG. 1, FIG. 2, FIG. 3, FIG. 4, FIGS. 5A and 5B, FIG. 6,and FIG. 7.

An example of each component of a liquid crystal display device 100illustrated in this embodiment is described with reference to FIG. 1.The liquid crystal display device 100 includes a power supply 116, adisplay control circuit 113, and a display panel 120. In the case of atransmissive liquid crystal display device or a transflective liquidcrystal display device, a backlight portion which is one of lightingunits may be further provided as a light source.

An image signal (image signal Data) is supplied to the liquid crystaldisplay device 100 from an external device which is connected to theliquid crystal display device 100. Note that power supply potential(high power supply potential V_(dd), low power supply potential V_(ss),and common potential V_(com)) is supplied by turning on the power supply116 of the liquid crystal display device and starting supplying power,and a control signal (a start pulse SP and a clock signal CK) issupplied by the display control circuit 113.

Note that the high power supply potential V_(dd) is potential higherthan reference potential, and the low power supply potential V_(ss) ispotential lower than or equal to the reference potential. It ispreferable that both the high power supply potential V_(dd) and the lowpower supply potential V_(ss) have such a level as to allow thetransistor to operate. The high power supply potential V_(dd) and thelow power supply potential V_(ss) are correlatively referred to as apower supply voltage in some cases.

The common potential V_(com) may be any potential as long as it servesas a fixed potential to be a reference with respect to the potential ofan image signal supplied to a pixel electrode. For example, the commonpotential may be ground potential.

The image signal Data may be appropriately inverted in accordance withdot inversion driving, source line inversion driving, gate lineinversion driving, frame inversion driving, or the like to be suppliedto the liquid crystal display device 100. In the case where the imagesignal is an analog signal, it may be converted to a digital signalthrough an A/D converter or the like to be supplied to the liquidcrystal display device 100.

In this embodiment, the common potential V_(com) which is a fixedpotential is supplied from the power supply 116 to a common electrode128 and one of electrodes of a capacitor through the display controlcircuit 113.

The display control circuit 113 supplies a display panel image signal(Data), a control signal (specifically, a signal for controllingswitching between a supply or a stop of a control signal such as a startpulse SP and a clock signal CK), and power supply potential (high powersupply potential V_(dd), low power supply potential V_(ss), and commonpotential V_(com)) to the display panel 120.

The display panel 120 includes a liquid crystal element 215 a and aliquid crystal element 215 b between a pair of substrates (a firstsubstrate and a second substrate), and a driver circuit portion 121 anda pixel portion 122 are provided over the first substrate. Further, thesecond substrate is provided with a common connection portion (alsoreferred to as a common contact) and the common electrode 128 (alsoreferred to as a counter electrode). Note that the first substrate andthe second substrate are electrically connected to each other throughthe common connection portion; therefore, the common connection portionmay be provided over the first substrate.

A plurality of gate lines 124 (124 a and 124 b) (scan lines) and aplurality of source lines 125 (signal lines) are provided in the pixelportion 122 and a plurality of pixels are provided in a matrix so thatthe pixels are surrounded by the gate lines 124 and the source lines125. Note that in the display panel illustrated in this embodiment, thegate lines 124 (124 a and 124 b) are extended from a gate line drivercircuit 121A and the source lines 125 are extended from a source linedriver circuit 121B.

The liquid crystal display device disclosed in this specificationincludes a plurality of units in one pixel and further includes aplurality of subunits in each unit. Each of the number of units in onepixel and the number of subunits may be at least two, and further, eachof them may be larger than two. In this embodiment, an example in whicha pixel includes a plurality of units 123 and the unit 123 furtherincludes a plurality of subunits 123 a and 123 b is shown. As an exampleof units provided in one pixel, an R (red) unit, a G (green) unit, and aB (blue) unit are provided in one pixel.

Display is performed using a plurality of miniaturized subunits, wherebyan image can be displayed with high definition. In addition, since aliquid crystal alignment can be controlled independently in eachsubunit, a viewing angle can be improved.

The liquid crystal element 215 a and the liquid crystal element 215 bare elements which control transmission or non-transmission of light byan optical modulation action of liquid crystal. The optical modulationaction of liquid crystal is controlled by an electric field applied tothe liquid crystal. An electric field direction applied to the liquidcrystal differs depending on a liquid crystal material, a drivingmethod, and an electrode structure and can be selected as appropriate.For example, in the case where a driving method in which an electricfield is applied in a direction of a thickness of liquid crystal(so-called a perpendicular direction) is used, a pixel electrode and acommon electrode are provided on the first substrate and the secondsubstrate, respectively, so that the liquid crystal is interposedbetween the pixel electrode and the common electrode. In the case wherea driving method in which an electric field is applied in an in-planedirection of a substrate (so-called a horizontal direction) to liquidcrystal is used, a pixel electrode and a common electrode may beprovided on the same substrate side of the liquid crystal. The pixelelectrode and the common electrode may have a variety of openingpatterns. There is no particular limitation on a liquid crystalmaterial, a driving method, and an electrode structure in thisembodiment as long as the element controls transmission ornon-transmission of light by the optical modulation action.

The subunit 123 a provided in the unit 123 includes a transistor 214 afunctioning as a switching element, a capacitor 210 a and the liquidcrystal element 215 a which are connected to the transistor 214 a, andthe subunit 123 b provided in the unit 123 includes a transistor 214 bfunctioning as a switching element, a capacitor 210 b and the liquidcrystal element 215 b which are connected to the transistor 214 b.

In this embodiment, voltages applied to the liquid crystal element 215 aand the liquid crystal element 215 b are different from each other,whereby alignments of liquid crystal are independently controlled in thesubunit 123 a and the subunit 123 b. Accordingly, a wide viewing angleis achieved.

In the subunit 123 a, a gate electrode of the transistor 214 a isconnected to the gate line 124 a provided in the pixel portion 122, oneof a source electrode and a drain electrode of the transistor 214 a isconnected to the source line 125, and the other of the source electrodeand the drain electrode of the transistor 214 a is connected to one ofelectrodes of the capacitor 210 a and one of electrodes (a pixelelectrode) of the liquid crystal element 215 a. In the subunit 123 b, agate electrode of the transistor 214 b is connected to the gate line 124b provided in the pixel portion 122, one of a source electrode and adrain electrode of the transistor 214 b is connected to the source line125, and the other of the source electrode and the drain electrode ofthe transistor 214 b is connected to one of electrodes of the capacitor210 b and one of electrodes (a pixel electrode) of the liquid crystalelement 215 b. In this embodiment, the common potential V_(com) which isa fixed potential is applied to the common electrode (electrode whichfaces the pixel electrode) of the liquid crystal element 215 a and theliquid crystal element 215 b, and the others of the electrodes of thecapacitor 210 a and the capacitor 210 b from the power supply 116through the display control circuit 113.

In the subunit 123 a and the subunit 123 b of this embodiment, differentpotentials are supplied to the transistor 214 a and the transistor 214 bby the gate line 124 a and the gate line 124 b. Therefore, thecapacitance of the capacitor 210 a and the capacitance of the capacitor210 b are different and the voltage applied to the liquid crystalelement 215 a and the voltage applied to the liquid crystal element 215b are different from each other. Thus, in the subunit 123 a and thesubunit 123 b, alignment of liquid crystal in the liquid crystal element215 a and alignment of liquid crystal in the liquid crystal element 215b can be controlled independently, so that a viewing angle can beimproved.

In order to apply different voltages to liquid crystal elements inrespective subunits, the following method also can be employed, forexample: the sizes of the transistor 214 a and the transistor 214 b aredifferent from each other, or the capacitor 210 a and the capacitor 210b are connected to respective capacitor lines which supply differentpotentials from each other.

A transistor whose off current is reduced is preferably used for each ofthe transistor 214 a and the transistor 214 b. When the transistor 214 aand the transistor 214 b are off, electrical charges accumulated in theliquid crystal elements 215 a and 215 b and the capacitors 210 a and 210b which are connected to the transistors 214 a and 214 b whose offcurrents are reduced hardly leak through the transistors 214 a and 214b, and a state in which a signal is written before the transistors 214 aand 214 b are off can be stably held until a next signal is written.Therefore, the subunit 123 a and the subunit 123 b can be formed withoutusing the capacitor 210 a and the capacitor 210 b which are connected tothe transistor 214 a and the transistor 214 b whose off currents arereduced.

With such a structure, the capacitor 210 a and the capacitor 210 b canhold a voltage applied to the liquid crystal element 215 a and theliquid crystal element 215 b. Alternatively, the electrodes of thecapacitor 210 a and the capacitor 210 b may be connected to a capacitorline additionally provided. In this case, the capacitor 210 a and thecapacitor 210 b may be connected to the same capacitor line or may beconnected to different capacitor lines.

The driver circuit portion 121 includes the gate line driver circuit121A and the source line driver circuit 121B. The gate line drivercircuit 121A and the source line driver circuit 121B are driver circuitsfor driving the pixel portion 122 including the plurality of pixels andeach include a shift register circuit (also referred to as a shiftregister).

Note that the gate line driver circuit 121A and the source line drivercircuit 121B may be formed over the same substrate as the pixel portion122 or may be formed over a different substrate from the substrate wherethe pixel portion 122 is formed.

Note that high power supply potential V_(dd), low power supply potentialV_(ss), a start pulse SP, a clock signal CK, and an image signal Datawhich are controlled by the display control circuit 113 are supplied tothe driver circuit portion 121.

A terminal portion 126 is an input terminal which supplies predeterminedsignals (high power supply potential V_(dd), low power supply potentialV_(ss), a start pulse SP, a clock signal CK, an image signal Data,common potential V_(com), and the like) which are output from thedisplay control circuit 113, to the driver circuit portion 121.

The common electrode 128 is electrically connected to a common potentialline which supplies common potential V_(com) controlled by the displaycontrol circuit 113 through the common connection portion.

As a specific example of the common connection portion, a conductiveparticle in which an insulating sphere is covered with a metal thin filmis provided between the common electrode 128 and the common potentialline, whereby the common electrode 128 and the common potential line canbe electrically connected to each other. Note that two or more commonconnection portions may be provided in the display panel 120.

In addition, the liquid crystal display device may include a photometrycircuit. The liquid crystal display device provided with the photometrycircuit can detect brightness of the environment where the liquidcrystal display device is set. Thus, the display control circuit 113 towhich the photometry circuit is connected can control a driving methodof a light source such as a backlight or a sidelight in accordance witha signal input from the photometry circuit.

Note that when color display is performed, display can be performedusing a color filter. In addition, another optical film (such as apolarizing film, a retardation film, or an anti-reflection film) can beused. A light source such as a backlight used for a transmissive liquidcrystal display device or a transflective liquid crystal display devicemay be used in accordance with usage of the liquid crystal displaydevice 100, and for example, a light-emitting diode (LED) or the likecan be used. Further, a surface light source may be formed using aplurality of LED light sources, a plurality of electroluminescent (EL)light sources, or the like. As the surface light source, three or morekinds of LEDs may be used and an LED emitting white light may be used.Note that the color filter is not provided in the case where RGBlight-emitting diodes or the like are arranged in a backlight and asuccessive additive color mixing method (a field sequential method) inwhich color display is performed by time division is employed.

Next, a structure and a driving method of a liquid crystal displaydevice 200 are described with reference to FIG. 2. The liquid crystaldisplay device 200 has a different structure from that of the aboveliquid crystal display device 100 and can achieve further low powerconsumption. Note that the same portions as the liquid crystal displaydevice 100 or portions having functions similar to those of the liquidcrystal display device 100 can be formed as in the liquid crystaldisplay device 100, and also the same steps as the liquid crystaldisplay device 100 or the steps similar to those of the liquid crystaldisplay device 100 can be performed in a manner similar to those of theliquid crystal display device 100; therefore, repetitive descriptionthereof is omitted. In addition, detailed description of the sameportions is omitted.

Each component of the liquid crystal display device 200 is illustratedin a block diagram of FIG. 2. The liquid crystal display device 200 hasa structure in which an image processing circuit 110 is added to thestructure of the liquid crystal display device 100. Note that in atransmissive liquid crystal display device or a transflective liquidcrystal display device, a backlight portion 130 is provided as a lightsource.

The image processing circuit 110 analyzes, calculates, and processes aninput image signal (image signal Data), and then outputs the processedimage signal together with a control signal to the display controlcircuit 113.

Specifically, the image processing circuit 110 analyzes the input imagesignal Data, judges whether the input image signal Data is for a movingimage or a still image, and outputs a control signal including thejudgment result to the display control circuit 113. Further, the imageprocessing circuit 110 captures a still image of one frame in the imagesignal Data including a moving image or a still image and outputs thecaptured image together with a control signal which indicates that thecaptured image is a still image to the display control circuit 113. Theimage processing circuit 110 outputs the input image signal Datatogether with the above control signal to the display control circuit113. Note that the above-described function is an example of functionswhich the image processing circuit 110 has, and a variety of imageprocessing functions may be selected in accordance with usage of thedisplay device.

Note that since an image signal which is converted to a digital signalis easily calculated (e.g., a difference between image signals isdetected), in the case where an input image signal (image signal Data)is an analog signal, an A/D converter or the like is provided in theimage processing circuit 110.

The backlight portion 130 includes a backlight control circuit 131 and abacklight 132. The backlight 132 may be used in accordance with usage ofthe liquid crystal display device 200, and a light-emitting diode (LED)or the like can be used for the backlight 132. For example, a whitelight-emitting element (e.g., a white LED) can be provided in thebacklight 132. A backlight signal which controls a backlight and powersupply potential are supplied from the display control circuit 113 tothe backlight control circuit 131.

Next, a driving method of the liquid crystal display device illustratedin FIG. 2 will be described with reference to FIG. 3, FIG. 4, FIGS. 5Aand 5B, and FIG. 6. The driving method of the liquid crystal displaydevice described in this embodiment is a display method in which thefrequency of rewriting in the display panel varies in accordance withproperties of a display image. Specifically, in the case where imagesignals in successive frames are different from each other (i.e., amoving image is displayed), a display mode in which an image signal iswritten in each frame period is used. On the other hand, in the casewhere image signals in successive frames have the same image (stillimage), used is a display mode in which writing of image signals isprevented or the writing frequency is extremely reduced in a period inwhich the same image is being displayed; the voltage applied to theliquid crystal element is held by setting potentials of the pixelelectrode and the common electrode which apply the voltage to the liquidcrystal element in a floating state; and accordingly a still image isdisplayed without an additional supply of potential.

The liquid crystal display device combines a moving image and a stillimage and performs display on the screen. Note that by switching of aplurality of different images which are time-divided into a plurality offrames at high speed, the images are recognized as a moving image byhuman eyes. Specifically, by switching of images at least 60 times (60frames) per second, the images are recognized as a moving image withfewer flickers by human eyes. In contrast, unlike a moving image and apartial moving image, a still image is an image which does not change insuccessive frame periods, for example, between an n-th frame and an(n+1)-th frame even though a plurality of images which are time-dividedinto a plurality of frame periods are switched at high speed.

The liquid crystal display device according to one embodiment of thepresent invention can realize different display modes which are a movingimage display mode when a moving image is displayed and a still imagedisplay mode when a still image is displayed. Note that in thisspecification, an image displayed in a still image mode is also called astatic image.

A connection between the display panel 120 and the display controlcircuit 113 in this embodiment is illustrated in FIG. 3.

In this embodiment, the display panel 120 includes a switching element127 in addition to the pixel portion 122. In this embodiment, thedisplay panel 120 includes the first substrate and the second substrate.The driver circuit portion 121, the pixel portion 122, and the switchingelement 127 are provided over the first substrate.

In addition, the unit 123 includes the subunit 123 a and the subunit 123b. The subunit 123 a includes the transistor 214 a functioning as aswitching element, the capacitor 210 a and the liquid crystal element215 a which are connected to the transistor 214 a, and the subunit 123 bincludes the transistor 214 b functioning as a switching element, thecapacitor 210 b and the liquid crystal element 215 b which are connectedto the transistor 214 b (see FIG. 3).

A transistor whose off current is reduced is preferably used for each ofthe transistor 214 a and the transistor 214 b. When the transistor 214 aand the transistor 214 b are off, electrical charges accumulated in theliquid crystal elements 215 a and 215 b and the capacitors 210 a and 210b which are connected to the transistors 214 a and 214 b whose offcurrents are reduced hardly leak through the transistors 214 a and 214b, and a state where a signal is written before the transistor 214 a andthe transistor 214 b are off can be stably held until a next signal iswritten.

In this embodiment, a liquid crystal is controlled by a verticalelectric field generated between the pixel electrode provided over thefirst substrate and the common electrode provided on the secondsubstrate which faces the first substrate.

As an example of liquid crystal applied to a liquid crystal element, thefollowing can be given: nematic liquid crystal, cholesteric liquidcrystal, smectic liquid crystal, discotic liquid crystal, thermotropicliquid crystal, lyotropic liquid crystal, low-molecular liquid crystal,polymer dispersed liquid crystal (PDLC), ferroelectric liquid crystal,anti-ferroelectric liquid crystal, main-chain liquid crystal, side-chainhigh-molecular liquid crystal, banana-shaped liquid crystal, and thelike.

In addition, examples of a driving method of liquid crystal include a TN(twisted nematic) mode, an STN (super twisted nematic) mode, an OCB(optically compensated birefringence) mode, an ECB (electricallycontrolled birefringence) mode, an FLC (ferroelectric liquid crystal)mode, an AFLC (anti-ferroelectric liquid crystal) mode, a PDLC (polymerdispersed liquid crystal) mode, a PNLC (polymer network liquid crystal)mode, a guest-host mode, and the like.

The switching element 127 supplies the common potential V_(com) to thecommon electrode 128 in accordance with a control signal which thedisplay control circuit 113 outputs. As the switching element 127, atransistor can be used. A gate electrode of the transistor and one of asource electrode and a drain electrode of the transistor may beconnected to the display control circuit 113 so that the commonpotential V_(com) is supplied from the display control circuit 113 tothe one of the source electrode and the drain electrode of thetransistor through the terminal portion 126. The other of the sourceelectrode and the drain electrode of the transistor may be connected tothe common electrode 128. Note that the switching element 127 may beformed over the same substrate as the driver circuit portion 121 and thepixel portion 122 or may be formed over a different substrate from thesubstrate where the driver circuit portion 121 and the pixel portion 122are formed.

A transistor whose off current is reduced is used as the switchingelement 127, whereby a reduction over time in the voltage applied toboth terminals of the liquid crystal element 215 a and both terminals ofthe liquid crystal element 215 b can be suppressed.

A terminal connected to the source electrode or the drain electrode ofthe switching element 127 and the common electrode 128 are electricallyconnected to each other through the common connection portion.

One of the source electrode and the drain electrode of the switchingelement 127 for which a transistor as one embodiment of the switchingelement is used is connected to a terminal 126B, and the other of thesource electrode and the drain electrode of the switching element 127 isconnected through the common connection portion to the other electrodesof the capacitors 210 a and 210 b and the other electrodes of the liquidcrystal elements 215 a and 215 b which are not connected to thetransistors 214 a and 214 b, respectively. Further, a gate electrode ofthe switching element 127 is connected to a terminal 126A.

Next, signals supplied to the pixels are described with reference to anequivalent circuit diagram of the liquid crystal display deviceillustrated in FIG. 3 and a timing chart shown in FIG. 4.

A clock signal GCK and a start pulse GSP which the display controlcircuit 113 supplies to the gate line driver circuit 121A are shown inFIG. 4. In addition, a clock signal SCK and a start pulse SSP which thedisplay control circuit 113 supplies to the source line driver circuit121B are shown in FIG. 4. Note that waveform of the clock signal isshown in simple rectangular waves in FIG. 4 in order to describe timingsof outputting the clock signals.

Further, high power supply potential V_(dd), potential of the sourceline 125 (potential of a Data line), potential of the pixel electrode,potential of the terminal 126A, potential of the terminal 126B, andpotential of the common electrode are shown in FIG. 4.

In FIG. 4, a period 1401 corresponds to a period in which image signalsfor displaying a moving image are written. In the period 1401, imagesignals and common potential are supplied to each pixel of the pixelportion 122 and the common electrode.

Further, a period 1402 corresponds to a period in which a still image isdisplayed. In the period 1402, the supply of image signals to each pixelof the pixel portion 122 and the common potential to the commonelectrode is stopped. Note that FIG. 4 shows that each signal issupplied so that the driver circuit portion stops operating in theperiod 1402; however, it is preferable to prevent deterioration of astill image by writing image signals periodically in accordance with thelength of the period 1402 and the refresh rate.

First, a timing chart in the period 1401 is described. In the period1401, a clock signal is always supplied as the clock signal GCK and apulse corresponding to vertical synchronization frequency is supplied asthe start pulse GSP. Moreover, in the period 1401, a clock signal isalways supplied as the clock signal SCK and a pulse corresponding to onegate selection period is supplied as the start pulse SSP.

The image signal Data is supplied to the pixels in each row through thesource line 125 and potential of the source line 125 is supplied to thepixel electrode in accordance with potential of the gate line 124.

The display control circuit 113 supplies potential which brings theswitching element 127 into electrical conduction to the terminal 126A ofthe switching element 127 and common potential to the common electrodethrough the terminal 126B.

On the other hand, the period 1402 is a period in which a still image isdisplayed. A timing chart in the period 1402 is described. In the period1402, the supply of the clock signal GCK, the start pulse GSP, the clocksignal SCK, and the start pulse SSP is stopped. Further, in the period1402, the supply of the image signal Data to the source line 125 isstopped. In the period 1402 in which the supply of the clock signal GCKand the start pulse GSP is stopped, the transistor 214 a and thetransistor 214 b are brought out of electrical conduction and thepotential of the pixel electrode becomes in a floating state.

In addition, the display control circuit 113 supplies potential to theterminal 126A of the switching element 127 to bring the switchingelement 127 out of electrical conduction, so that the potential of thecommon electrode becomes in a floating state.

In the period 1402, the potential of both terminals of the liquidcrystal element 215 a and both terminals of the liquid crystal element215 b, that is, the pixel electrode and the common electrode, becomes ina floating state, so that a still image can be displayed withoutadditional potential supply.

The supply of a clock signal and a start pulse to the gate line drivercircuit 121A and the source line driver circuit 121B is stopped, so thatlow power consumption can be achieved.

In particular, a transistor whose off current is reduced is used foreach of the transistor 214 a, the transistor 214 b, and the switchingelement 127, whereby a reduction over time in the voltage applied toboth terminals of the liquid crystal element 215 a and both terminals ofthe liquid crystal element 215 b can be suppressed.

Next, operation of the display control circuit in a period in which adisplayed image is switched to a still image from a moving image (aperiod 1403 in FIG. 4) and in a period in which a displayed image isswitched to a moving image from the still image (a period 1404 in FIG.4) is described with reference to FIGS. 5A and 5B. FIGS. 5A and 5B showhigh power supply potential V_(dd), a clock signal (here, GCK), a startpulse signal (here, GSP), and potential of the terminal 126A which thedisplay control circuit outputs.

The operation of the display control circuit in the period 1403 in whichthe displayed image is switched to the still image to the moving imageis shown in FIG. 5A. The display control circuit stops the supply of thestart pulse GSP (E1 in FIG. 5A, a first step). Next, the supply of aplurality of clock signals GCK is stopped after the pulse output reachesthe last stage of the shift register (E2 in FIG. 5A, a second step).Next, the power supply voltage is changed from the high power supplypotential V_(dd) to the low power supply potential V_(ss) (E3 in FIG.5A, a third step). Next, the potential of the terminal 126A is changedto potential which brings the switching element 127 out of electricalconduction (E4 in FIG. 5A, a fourth step).

Through the above steps, the supply of the signals to the driver circuitportion 121 can be stopped without a malfunction of the driver circuitportion 121. Since a malfunction generated when the displayed image isswitched to a still image to a moving image causes a noise and the noiseis held as a still image, a liquid crystal display device mounted with adisplay control circuit with less malfunctions can display a still imagewith less image deterioration.

Next, the operation of the display control circuit in the period 1404 inwhich the displayed image is switched to the moving image from the stillimage is described with reference to FIG. 5B. The display controlcircuit changes the potential of the terminal 126A into a potential atwhich the switching element 127 is turn on (51 in FIG. 5B, a firststep). Next, the power supply voltage is changed from the low powersupply potential V_(ss) to the high power supply potential V_(dd) (S2 inFIG. 5B, a second step). After high potential is applied, a plurality ofclock signals GCK are supplied (S3 in FIG. 5B, a third step). Next, thestart pulse signal GSP is supplied (S4 in FIG. 5B, a fourth step).

Through the above steps, the supply of driving signals to the drivercircuit portion 121 can restart without a malfunction of the drivercircuit portion 121. When potentials of wirings are sequentially changedback to those at the time of displaying a moving image, the drivercircuit portion can be driven without a malfunction.

In addition, the frequency of writing image signals in the period 601 inwhich a moving image is displayed and the period in which a still imageis displayed is schematically shown in FIG. 6. In FIG. 6, “W” indicatesa period in which an image signal is written, and “H” indicates a periodin which the image signal is held. In addition, a period 603 indicatesone frame period; however, the period 603 may be a different period.

As described above, in the liquid crystal display device of thisembodiment, an image signal of a still image displayed in the period 602is written in a period 604, and the image signal written in the period604 is held in the periods which are other than the period 604 of theperiod 602.

Next, a structure of the image processing circuit 110 and a procedure inwhich the image processing circuit 110 processes signals are describedwith reference to FIG. 7 as an example. Note that the image processingcircuit 110 illustrated in FIG. 7 is just one of embodiments and thisembodiment is not limited to this structure.

The image processing circuit 110 illustrated in FIG. 7 analyzes imagesignals which are successively input and judges whether the input imagesignal is for a moving image or a still image. When the inputted imagesignal (image signal Data) is switched from a moving image signal to astill image signal, the image processing circuit 110 captures a stillimage and outputs the captured image together with a control signalwhich indicates that the captured image is a still image to the displaycontrol circuit 113. When the inputted image signal (image signal Data)is changed from a still image signal to a moving image signal, the imageprocessing circuit 110 outputs an image signal including a moving imagetogether with a control signal which indicates that the image signal isa moving image to the display control circuit 113.

The image processing circuit 110 illustrated in FIG. 7 includes a memorycircuit 111, a comparison circuit 112, and a selection circuit 115. Theimage processing circuit 110 generates a display panel image signal anda backlight signal from an input digital image signal Data. The displaypanel image signal is an image signal which controls the display panel120 and the backlight signal is a signal which controls the backlightportion 130.

The memory circuit 111 includes a plurality of frame memories forstoring image signals of a plurality of frames. There is no particularlimitation on the number of frame memories included in the memorycircuit 111 as long as the image signals of a plurality of frames can bestored. Note that the frame memory may be formed using a memory elementsuch as a dynamic random access memory (DRAM) or a static random accessmemory (SRAM).

Note that the number of frame memories is not particularly limited to acertain number as long as each frame memory stores an image signal forone frame period. Further, the image signals stored in the framememories are selectively read by the comparison circuit 112 and thedisplay control circuit 113. Note that a frame memory 111 b in thedrawing is schematically illustrated as a memory region of one frame.

The comparison circuit 112 is a circuit which selectively reads outimage signals in successive frame periods stored in the memory circuit111, compares the image signals in of the successive frames in eachpixel, and detects a difference thereof.

Note that in this embodiment, operation of the display control circuit113 and the selection circuit 115 is determined depending on whether ornot a difference between image signals is detected in of the successiveframes. In the case where the comparison circuit 112 detects adifference in any pixel between frames (in the case a difference isdetected), the comparison circuit 112 determines that the image signalsare not for displaying a still image and that the image signals of thesuccessive frame periods in which a difference is detected are for amoving image.

On the other hand, in the case where a difference is not detected in allpixels by the comparison between image signals by the comparison circuit112 (in the case of no difference is detected), the comparison circuit112 determines that images of the successive frame periods in which adifference is not detected are for a still image. That is, thecomparison circuit 112 determines whether image signals in a successiveframe periods are image signals for displaying a moving image or imagesignals for displaying a still image by detecting whether or not thereis a difference between the image signals.

Note that the criterion of determining that there is a difference by thecomparison may be set such a condition that the difference is recognizedwhen the difference exceeds a predetermined level. Note that adifference detected by the comparison circuit 112 may be determined bythe absolute value of the difference.

Further, in this embodiment, the structure is described in which whetherthe image is a moving image or a still image is determined by detectionof a difference between image signals in a successive frame periods bythe comparison circuit 112 provided in the liquid crystal display device200; however, a structure in which a signal indicating whether an imageis a moving image or a still image may be supplied from the outside.

The selection circuit 115 includes a plurality of switches, for example,switches formed using transistors. In the case where the comparisoncircuit 112 detects a difference in successive frames, that is, in thecase where an image is a moving image, the selection circuit 115 selectsan image signal of a moving image from frame memories in the memorycircuit 111 and outputs the image signals to the display control circuit113.

Note that in the case where the comparison circuit 112 does not detect adifference in successive frames, that is, in the case where an image isa still image, the selection circuit 115 does not output an image signalfrom frame memories in the memory circuit 111 to the display controlcircuit 113. Image signals are not output from the frame memories to thedisplay control circuit 113, whereby power consumption of the liquidcrystal display device can be reduced.

Note that in the liquid crystal display device of this embodiment, amode performed in such a way that the comparison circuit 112 determinesthe image signal as a still image is described as a still image displaymode, and a mode performed in such a way that the comparison circuit 112determines the image signal as a moving image is described as a movingimage display mode.

As described above, with the use of the image processing circuit 110illustrated in FIG. 7, whether an input image signal Data is for amoving image or a still image is determined and a control signalincluding a judgement result is output to the display control circuit113. Further, the image processing circuit 110 can capture a still imageof one frame from the image signal Data including a moving image or astill image and can output the still image together with a controlsignal which indicates that the captured image is a still image to thedisplay control circuit 113. Furthermore, the image processing circuit110 can output the input image signal Data together with the abovecontrol signal to the display control circuit 113.

In addition, the display control circuit 113 which receives the controlsignal which indicates a still image from the image processing circuit110 can reduce the frequency of writing image signals in a period inwhich a still image is displayed. As a result, low power consumptionwhile a still image is being displayed can be achieved.

In the case where a still image is displayed by rewriting the same imagea plurality of times, switching of images can be seen, which might causeeye strain. In the liquid crystal display device of this embodiment, thefrequency of writing image signals is reduced, whereby there is aneffect of reducing eye strain.

Specifically, by using transistors whose off currents are reduced foreach pixel and a switching element of the common electrode, the liquidcrystal display device of this embodiment can provide a long period(time) of holding a voltage in a storage capacitor. As a result, thefrequency of writing image signals can be especially reduced, so thatconsumed power at the time of displaying a still image and eye straincan be significantly reduced.

Embodiment 2

In this embodiment, an example of an electronic device including theliquid crystal display device described in Embodiment 1 will bedescribed.

FIG. 8A illustrates an external view of a television receiver which isan electronic device. FIG. 8A illustrates a housing 700 in which adisplay module 701 manufactured using the display panel described inEmbodiment 1 is provided. The housing 700 includes a speaker 702,operation keys 703, an external connection terminal 704, an illuminancesensor 705, and the like.

The television receiver illustrated in FIG. 8A can display textinformation or a still image in addition to a moving image. A movingimage can be displayed in a region of a display portion while a stillimage can be displayed in the other region. Note that a still imagedisplayed includes characters, diagrams, signs, pictures, designs, andpaintings or a combination of any of them. Alternatively, any of thedisplayed images which are colored is included.

FIG. 8B shows a block diagram of a main structure of the televisionreceiver. A television receiver 710 illustrated in FIG. 8B includes atuner 711, a digital demodulation circuit 712, a video signal processingcircuit 713, an audio signal processing circuit 714, a display adjustingcircuit 715, a display control circuit 716, a display panel 717, a gateline driver circuit 718, a source line driver circuit 719, a speaker720, and an image processing circuit 724.

The tuner 711 receives a video signal and an audio signal from anantenna 721. The digital demodulation circuit 712 demodulates a signalfrom the tuner 711 to a video signal and an audio signal of a digitalsignal. The video signal processing circuit 713 converts a video signalof a digital signal into a color signal corresponding to each color:red, green, and blue. The audio signal processing circuit 714 performsconversion of an audio signal of a digital signal into a signal which isoutput as the sound from the speaker 720, and the like. The displayadjusting circuit 715 receives control information of a receivingstation (receiving frequency) and sound volume from an external inputportion 722 and transmits the signal to the tuner 711 or the audiosignal processing circuit 714.

The display control circuit 716, the display panel 717, the gate linedriver circuit 718, the source line driver circuit 719, and the imageprocessing circuit 724 correspond to the display control circuit 113,the display panel 120, the gate line driver circuit 121A, the sourceline driver circuit 121B, and the image processing circuit 110 describedin Embodiment 1 respectively. That is, a dotted line portion 723 has astructure corresponding to the liquid crystal display device 200described in Embodiment 1. Note that the video signal processing circuit713 may also serve as the display control circuit 716 and the imageprocessing circuit 724. Therefore, the frequency of rewriting imagesignals can be reduced, and there is an effect that a flicker due torewriting is reduced and eye strain is reduced.

Next, FIG. 9A illustrates an external view of a monitor (also referredto as a PC monitor) used for an electronic calculator (a personalcomputer) which is an electronic device. FIG. 9A illustrates a housing800 in which a display module 801 manufactured using the display paneldescribed in Embodiment 1 is provided. The housing 800 includes aspeaker 802, an external connection terminal 803, and the like. Notethat in FIG. 9A, a window-type display portion 804 is illustrated toindicate that the monitor is a PC monitor.

In FIG. 9A, a main structure of a PC monitor of a so-called desktopcomputer is illustrated but the PC monitor may also be a PC monitor of alaptop computer. Note that a display of the PC monitor includes stillimages such as characters, diagrams, signs, pictures, designs, andpaintings or a combination any of them, or any of the still images whichare colored, in addition to moving images.

A block diagram of a main structure of a PC monitor is illustrated inFIG. 9B. A PC monitor 810 illustrated in FIG. 9B includes a video signalprocessing circuit 813, an audio signal processing circuit 814, adisplay control circuit 816, a display panel 817, a gate line drivercircuit 818, a source line driver circuit 819, a speaker 820, and animage processing circuit 824.

The video signal processing circuit 813 converts a video signal from anexternal arithmetic circuit 821 such as a CPU into a color signalcorresponding to each color: red, green, and blue. The audio signalprocessing circuit 814 performs conversion of an audio signal from theexternal arithmetic circuit 821 such as a CPU into a signal which isoutput as the sound from the speaker 820, and the like. A signal outputfrom the video signal processing circuit 813 and the audio signalprocessing circuit 814 varies according to operation by an externaloperation means 822 such as a keyboard.

The display control circuit 816, the display panel 817, the gate linedriver circuit 818, the source line driver circuit 819, and the imageprocessing circuit 824 correspond to the display control circuit 113,the display panel 120, the gate line driver circuit 121A, the sourceline driver circuit 121B, and the image processing circuit 110 describedin Embodiment 1 respectively. That is, a dotted line portion 823 has astructure corresponding to the liquid crystal display device 200described in Embodiment 1. Note that the video signal processing circuit813 and the image processing circuit 824 may also serve as the displaycontrol circuit 816. Therefore, the frequency of rewriting image signalscan be reduced, and there is an effect that a flicker due to rewritingis reduced and eye strain is reduced.

This embodiment can be implemented in appropriate combination with anyof the structures described in the other embodiments.

Embodiment 3

In this embodiment, description is made on a structure example of abacklight (a backlight portion, a backlight unit) which can be appliedto a liquid crystal display device disclosed in this specification withreference to FIGS. 10A to 10C and FIGS. 11A to 11C.

FIG. 10A illustrates an example of a liquid crystal display deviceincluding a so-called edge-light type backlight portion 5201 and adisplay panel 5207. An edge-light type corresponds to a type in which alight source is provided at an end of a backlight portion and light ofthe light source is emitted from the entire light-emitting surface.

The backlight portion 5201 includes a diffusion plate 5202 (alsoreferred to as a diffusion sheet), a light guide plate 5203, areflection plate 5204, a lamp reflector 5205, and a light source 5206.Note that the backlight portion 5201 may also include a luminanceimprovement film or the like.

The light source 5206 has a function of emitting light as necessary. Forexample, for the light source 5206, a cold cathode fluorescent lamp(CCFL), a light emitting diode, an EL element, or the like is used.

FIG. 10B is a diagram illustrating a detailed structure of an edge-lighttype backlight portion. Note that description of a diffusion plate, alight guide plate, a reflection plate, and the like is omitted.

A backlight portion 5201 illustrated in FIG. 10B has a structure inwhich light-emitting diodes (LEDs) 5223 are used as light sources. Forexample, the light-emitting diodes (LEDs) 5223 which emit white lightare provided at a predetermined interval. In addition, a lamp reflector5222 is provided to reflect light from the light-emitting diodes (LEDs)5223 efficiently. Note that in the case where display is performed incombination with a field-sequential method, light-emitting diodes (LEDs)of each color of RGB may be used as light sources.

FIG. 10C shows an example of a liquid crystal display device including aso-called direct-type backlight portion and a liquid crystal panel. Adirect type corresponds to a type in which a light source is provideddirectly under a light-emitting surface and light of the light source isemitted from the entire light-emitting surface.

A backlight portion 5290 includes a diffusion plate 5291, alight-shielding portion 5292, a lamp reflector 5293, a light source5294, and a liquid crystal panel 5295.

The light source 5294 has a function of emitting light as necessary. Forexample, for the light source 5294, a cold cathode fluorescent lamp, alight-emitting diode, an EL element which is a light-emitting element(e.g., an organic electroluminescence element), or the like is used.

Note that in the so-called direct-type backlight portion, the thicknessof the backlight portion can be reduced with use of an EL element whichis a light-emitting element as a light source. An example of a backlightportion using an EL element is illustrated in FIG. 11A.

A backlight portion 5290 illustrated in FIG. 11A includes an EL element1025 provided over a substrate 1020. The EL element 1025 has a structurein which an EL layer 1003 including a light-emitting region issandwiched between a pair of electrodes (an anode 1001 and a cathode1002). Note that a substrate, a film, a protective film, or the like maybe provided to cover the EL element 1025 so that the EL element 1025 maybe sealed.

In this embodiment, since light from the EL layer 1003 is emitted to thedisplay panel 5207 through the anode 1001, the anode 1001 may include amaterial which emits light such as an indium tin oxide (ITO). Thecathode 1002 may include a material which reflects light such as analuminum film. At least one of the anode 1001 and the cathode 1002 mayhave light-emitting properties.

Examples of element structures of the EL element 1025 in FIG. 11A areillustrated in FIGS. 11B and 11C.

The EL layer 1003 may include at least a light-emitting layer 1013, andmay have a stacked-layer structure including a functional layer otherthan the light-emitting layer 1013. As the functional layer other thanthe light-emitting layer 1013, a layer containing a substance having ahigh hole-injection property, a substance having a high hole-transportproperty, a substance having a high electron-transport property, asubstance having a high electron-injection property, a bipolar substance(a substance having high electron and hole transport properties), or thelike can be used. Specifically, functional layers such as ahole-injection layer 1011, a hole-transport layer 1012, thelight-emitting layer 1013, an electron-transport layer 1014, and anelectron-injection layer 1015 can be used as appropriate in combination.

Next, materials that can be used for the above-described EL element 1025are specifically described.

The anode 1001 is preferably made of a metal, an alloy, an electricallyconductive compound, a mixture thereof, or the like that has a high workfunction (specifically, a work function of 4.0 eV or higher ispreferable). Specifically, for example, conductive metal oxide such asindium oxide-tin oxide (ITO: indium tin oxide), indium oxide-tin oxidecontaining silicon or silicon oxide, indium oxide-zinc oxide (IZO:indium zinc oxide), or indium oxide containing tungsten oxide and zincoxide can be given.

Films of these conductive metal oxides are usually formed by sputtering;however, a sol-gel method or the like may also be used. For example,indium oxide-zinc oxide (IZO) can be formed by a sputtering method usingindium oxide into which zinc oxide of 1 wt % to 20 wt % is added, as atarget. Indium oxide containing tungsten oxide and zinc oxide can beformed by a sputtering method using indium oxide into which tungstenoxide of 0.5 wt % to 5 wt % and zinc oxide of 0.1 wt % to 1 wt % areadded, as a target.

Besides, as a material used for the anode 1001, it is also possible touse gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr),molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd),titanium (Ti), nitride of a metal material (such as titanium nitride),molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide,manganese oxide, titanium oxide, or the like.

The cathode 1002 can be made of a metal, an alloy, an electricallyconductive compound, a mixture thereof, or the like that has a low workfunction (specifically, a work function lower than or equal to 3.8 eV ispreferable). As a specific example of such a cathode material, anelement belonging to Group 1 or Group 2 in the periodic table, i.e., analkali metal such as lithium (Li) or cesium (Cs), or an alkaline earthmetal such as magnesium (Mg), calcium (Ca), or strontium (Sr); an alloycontaining any of these (such as MgAg or AlLi); a rare earth metal suchas europium (Eu) or ytterbium (Yb); an alloy containing any of such arare earth metal; or the like can be used. Note that a film of an alkalimetal, an alkaline earth metal, or an alloy thereof can be formed by avacuum evaporation method. An alloy containing an alkali metal or analkaline earth metal can also be formed by a sputtering method. Further,a silver paste or the like can be formed by an inkjet method or thelike.

In addition, the cathode 1002 can be formed by a stack of a thin film ofan alkali metal compound, an alkaline earth metal compound, or a rareearth metal compound (e.g., lithium fluoride (LiF), lithium oxide(LiO_(x)), cesium fluoride (CsF), calcium fluoride (CaF₂), or erbiumfluoride (ErF₃)) and a film of a metal such as aluminum.

Next, specific examples of materials used for forming each of layersincluded in the EL layer 1003 are described below.

The hole-injection layer 1011 is a layer including a substance having ahigh hole-injection property. As the substance having a highhole-injection property, for example, molybdenum oxide, vanadium oxide,ruthenium oxide, tungsten oxide, manganese oxide, or the like can beused. Alternatively, the hole-injection layer 1011 can be formed using aphthalocyanine-based compound such as phthalocyanine (abbreviation:H₂Pc) or copper phthalocyanine (abbreviation: CuPc); an aromatic aminecompound such as4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation:DPAB) orN,N′-bis[4-[bis(3-methylphenyl)amino]phenyl]-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: DNTPD); a high molecule such aspoly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid)(PEDOT/PSS),or the like. Further, the hole-injection layer 1011 can be formed usinga tris(p-enamine-substituted-aminophenyl)amine compound, a2,7-diamino-9-fluorenylidene compound, atri(p-N-enamine-substituted-aminophenyl) benzene compound, a pyrenecompound having one or two ethenyl groups having at least one arylgroup, N,N′-di(biphenyl-4-yl)-N,N′-diphenylbiphenyl-4,4′-diamine,N,N,N′,N′-tetra(biphenyl-4-yl)biphenyl-4,4′-diamine,N,N,N′,N′-tetra(biphenyl-4-yl)-3,3′-diethylbiphenyl-4,4′-diamine,2,2′-(methylenedi-4,1-phenylene)bis[4,5-bis(4-methoxyphenyl)-2H-1,2,3-triazole],2,2′-(biphenyl-4,4′-diyl)bis(4,5-diphenyl-2H-1,2,3-triazole),2,2′-(3,3′-dimethylbiphenyl-4,4′-diyl)bis(4,5-diphenyl-2H-1,2,3-triazole),bis[4-(4,5-diphenyl-2H-1,2,3-triazol-2-yl)phenyl](methyl)amine, or thelike.

The hole-injection layer 1011 can also be formed of a hole-injectioncomposite material including an organic compound and an inorganiccompound (preferably, an inorganic compound having an electron-acceptingproperty to an organic compound). Since electrons are transferredbetween the organic compound and the inorganic compound, thehole-injection composite material has a high carrier density, and thushas an excellent hole-injection property and a hole-transport property.

In the case where the hole-injection layer 1011 is made of ahole-injection composite material, the hole-injection layer 1011 canform an ohmic contact with the anode 1001; thus, the material of theanode 1001 can be selected regardless of the work function.

The inorganic compound used for the hole-injection composite material ispreferably an oxide of a transition metal. In addition, an oxide ofmetals that belong to Group 4 to Group 8 in the periodic table can begiven. Specifically, vanadium oxide, niobium oxide, tantalum oxide,chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, andrhenium oxide are preferable since their electron-accepting propertiesare high. Among them, use of molybdenum oxide is especially preferablesince it is stable in the air, has a low hygroscopic property, and iseasily treated.

As the organic compound used for the hole-injection composite material,it is possible to use various compounds such as an aromatic aminecompound, a carbazole derivative, an aromatic hydrocarbon, and a highmolecular compound (oligomer, dendrimer, polymer, or the like). Notethat the organic compound used for the hole-injection composite materialis preferably an organic compound with a high hole-transport property.Specifically, a substance having a hole mobility greater than or equalto 10⁻⁶ cm²/Vs is preferably used. Note that substances other than theabove described materials may also be used as long as the substances inwhich a hole-transport property is higher than an electron-transportproperty. The organic compounds that can be used for the hole-injectioncomposite material are specifically described below.

As aromatic amine compounds, for example, there areN,N′-di(p-tolyl)-N,N′-diphenyl-p-phenylenediamine (abbreviation:DTDPPA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl(abbreviation: DPAB),N,N′-bis[4-[bis(3-methylphenyl)amino]phenyl]-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: DNTPD),1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene(abbreviation: DPA3B), and the like.

Specific examples of the carbazole derivative used for thehole-injection composite material include:3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: CzPCA1);3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA2);3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(abbreviation: PCzPCN1); and the like.

Moreover, 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP);1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB);9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA);1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene; or the likecan also be used.

Examples of the aromatic hydrocarbon used for the hole-injectioncomposite material include: 2-tert-butyl-9,10-di(2-naphthyl)anthracene(abbreviation: t-BuDNA); 2-tert-butyl-9,10-di(1-naphthyl)anthracene;9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA);2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA);9,10-di(2-naphthyl)anthracene (abbreviation: DNA);9,10-diphenylanthracene (abbreviation: DPAnth); 2-tert-butylanthracene(abbreviation: t-BuAnth); 9,10-bis(4-methyl-1-naphthyl)anthracene(abbreviation: DMNA);2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene;9,10-bis[2-(1-naphthyl)phenyl]anthracene;2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene;2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene; 9,9′-bianthryl;10,10′-diphenyl-9,9′-bianthryl;10,10′-bis(2-phenylphenyl)-9,9′-bianthryl;10,10′-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl; anthracene;tetracene; rubrene; perylene; 2,5,8,11-tetra(tert-butyl)perylene; andthe like. Besides those, pentacene, coronene, or the like can also beused. In particular, the aromatic hydrocarbon having a hole mobilitygreater than or equal to 1×10⁻⁶ cm²/Vs and having 14 to 42 carbon atomsis particularly preferable.

Note that the aromatic hydrocarbon used for the hole-injection compositematerial may have a vinyl skeleton. As the aromatic hydrocarbon having avinyl group, the following are given for example:4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi);9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA);and the like.

In addition, a high molecular compound such as poly(N-vinylcarbazole)(abbreviation: PVK) or poly(4-vinyltriphenylamine) (abbreviation: PVTPA)can also be used.

The hole-transport layer 1012 includes a substance having a highhole-transport property. As the substance having a high hole-transportproperty, for example, an aromatic amine compound (that is, a compoundhaving a benzene ring-nitrogen bond) is preferable. As examples of thematerial which are widely used, the following can be given:4,4′-bis[N-(3-methylphenyl)-N-phenylamino]biphenyl; a derivative thereofsuch as 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (hereinafterreferred to as NPB); and a starburst aromatic amine compound such as4,4′,4″-tris(N,N-diphenyl-amino)triphenylamine,4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine, and thelike. The substances mentioned here are mainly ones that have a holemobility higher than or equal to 10⁻⁶ cm²/Vs. Note that substances otherthan the above described materials may also be used as long as thesubstances have a higher hole-transport property than anelectron-transport property. The hole-transport layer 1012 is notlimited to a single layer, and may be a mixed layer of theaforementioned substances or a stacked layer of two or more layers eachincluding the aforementioned substance.

Alternatively, a material with a hole-transport property may be added toa high molecular compound that is electrically inactive, such as PMMA.

Further alternatively, a high molecular compound such aspoly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine)(abbreviation: PVTPA),poly[N-(4-{4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino}phenyl)methacrylamide](abbreviation: PTPDMA), orpoly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine (abbreviation:Poly-TPD) may be used, and further, the material with a hole-transportproperty may be added to the above high molecular compound, asappropriate. Further, the hole-transport layer 1012 can be formed usinga tris(p-enamine-substituted-aminophenyl)amine compound, a2,7-diamino-9-fluorenylidene compound, atri(p-N-enamine-substituted-aminophenyl) benzene compound, a pyrenecompound having one or two ethenyl groups having at least one arylgroup, N,N′-di(biphenyl-4-yl)-N,N′-diphenylbiphenyl-4,4′-diamine,N,N,N′,N′-tetra(biphenyl-4-yl)biphenyl-4,4′-diamine,N,N,N′,N′-tetra(biphenyl-4-yl)-3,3′-diethylbiphenyl-4,4′-diamine,2,2′-(methylenedi-4,1-phenylene)bis[4,5-bis(4-methoxyphenyl)-2H-1,2,3-triazole],2,2′-(biphenyl-4,4′-diyl)bis(4,5-diphenyl-2H-1,2,3-triazole),2,2′-(3,3′-dimethylbiphenyl-4,4′-diyl)bis(4,5-diphenyl-2H-1,2,3-triazole),bis[4-(4,5-diphenyl-2H-1,2,3-triazol-2-yl)phenyl](methyl)amine, or thelike.

The light-emitting layer 1013 is a layer including a light-emittingsubstance and can be formed using a variety of materials. For example,as a light-emitting substance, a fluorescent compound which emitsfluorescence or a phosphorescent compound which emits phosphorescencecan be used. Organic compound materials which can be used for thelight-emitting layer are described below. Note that materials which canbe used for the EL element 1025 are not limited to these materials.

Blue to blue-green light emission can be obtained, for example, by usingperylene, 2,5,8,11-tetra-t-butylperylene (abbreviation: TBP),9,10-diphenylanthracene, or the like as a guest material, and dispersingthe guest material in a suitable host material. Alternatively, the blueto blue-green light emission can be obtained from a styrylarylenederivative such as 4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation:DPVBi), or an anthracene derivative such as 9,10-di-2-naphthylanthracene(abbreviation: DNA) or 9,10-bis(2-naphthyl)-2-t-butylanthracene(abbreviation: t-BuDNA). Further, a polymer such aspoly(9,9-dioctylfluorene) may be used. Further, as a guest material forblue light emission, a styrylamine derivative is preferable. Exampleswhich can be given includeN,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine(abbreviation: YGA2S),N,N′-diphenyl-N,N′-bis(9-phenyl-9H-carbazol-3-yl)stilbene-4,4′-diamine(abbreviation: PCA2S), and the like. In particular, YGA2S is preferablebecause it has a peak at around 450 nm. Further, as a host material, ananthracene derivative is preferable;9,10-bis(2-naphthyl)-2-t-butylanthracene (abbreviation: t-BuDNA) or9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA) issuitable. In particular, CzPA is preferable because it iselectrochemically stable.

Blue-green to green light emission can be obtained, for example, byusing a coumarin dye such as coumarin 30 or coumarin 6,bis[2-(2,4-difluorophenyl)pyridinato]picolinatoiridium (abbreviation:Flrpic), bis(2-phenylpyridinato)acetylacetonatoiridium (abbreviation:Ir(ppy)₂(acac)), or the like as a guest material and dispersing theguest material in a suitable host material. Further, blue-green to greenlight emission can be obtained by dispersing perylene or TBP, which arementioned above, in a suitable host material at a high concentrationgreater than or equal to 5 wt %. Further alternatively, the blue-greento green light emission can be obtained from a metal complex such asBAlq, Zn(BTZ)₂, or bis(2-methyl-8-quinolinolato)chlorogallium(Ga(mq)₂Cl). Further, a polymer such as poly(p-phenylenevinylene) may beused. An anthracene derivative is preferable as a guest material of ablue-green to green light-emitting layer, as high light-emittingefficiency can be obtained when an anthracene derivative is used. Forexample, when9,10-bis{4-[N-(4-diphenylamino)phenyl-N-phenyl]aminophenyl}-2-tert-butylanthracene(abbreviation: DPABPA) is used, highly efficient blue-green lightemission can be obtained. In addition, an anthracene derivative in whichan amino group has been substituted into the 2-position is preferable,as highly efficient green light emission can be obtained with such ananthracene derivative. In particular,N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA) is suitable, as it has a long life. As a hostmaterial for these materials, an anthracene derivative is preferable;CzPA, which is mentioned above, is preferable, as it iselectrochemically stable. In the case where the EL element 1025 havingtwo peaks in the blue to green wavelength range is manufactured bycombining green light emission and blue light emission, an anthracenederivative having an electron-transport property, such as CzPA, ispreferably used as a host material for a blue-light-emitting layer andan aromatic amine compound having a hole-transport property, such asNPB, is preferably used as a host material for a green-light-emittinglayer, so that light emission can be obtained at the interface betweenthe blue-light-emitting layer and the green-light-emitting layer. Thatis, in such a case, an aromatic amine compound like NPB is preferable asa host material of a green light-emitting material such as 2PCAPA.

Yellow to orange light emission can be obtained, for example, by usingrubrene,4-(dicyanomethylene)-2-[p-(dimethylamino)styryl]-6-methyl-4H-pyran(abbreviation: DCM1),4-(dicyanomethylene)-2-methyl-6-(9-julolidyl)ethenyl-4H-pyran(abbreviation: DCM2), bis[2-(2-thienyl)pyridinato]acetylacetonatoiridium(abbreviation: Ir(thp)₂(acac)),bis(2-phenylquinolinato)acetylacetonatoiridium (abbreviation:Ir(pq)₂(acac)), or the like as a guest material and dispersing the guestmaterial in a suitable host material. In particular, a tetracenederivative such as rubrene is preferable as a guest material because itis highly efficient and chemically stable. As a host material in thiscase, an aromatic amine compound such as NPB is preferable.Alternatively, a metal complex such as bis(8-quinolinolato)zinc(II)(abbreviation: Znq₂), bis[2-cinnamoyl-8-quinolinolato]zinc(abbreviation: Znsq₂), or the like can be used as a host material.Further alternatively, a polymer, such aspoly(2,5-dialkoxy-1,4-phenylenevinylene) may be used.

Orange to red light emission can be obtained, for example, by using4-(dicyanomethylene)-2,6-bis[p-(dimethylamino)styryl]-4H-pyran(abbreviation: BisDCM),4-(dicyanomethylene)-2,6-bis[2-(julolidin-9-yl)ethenyl]-4H-pyran(abbreviation: BisDCJ),4-(dicyanomethylene)-2-methyl-6-(9-julolidyl)ethenyl-4H-pyran(abbreviation: DCM2), bis[2-(2-thienyl)pyridinato]acetylacetonatoiridium(abbreviation: Ir(thp)₂(acac)), or the like as a guest material anddispersing the guest material in a suitable host material. Orange to redlight emission can also be obtained by using a metal complex such asbis(8-quinolinolato)zinc(II) (abbreviation: Znq₂),bis[2-cinnamoyl-8-quinolinolato]zinc (abbreviation: Znsq₂), or the like.Further, a polymer such as poly(3-alkylthiophene) may be used. As aguest material which exhibits red light emission, a 4H-pyran derivativesuch as 4-(dicyanomethylene)-2,6-bis[p-(dimethylamino)styryl]-4H-pyran(abbreviation: BisDCM),4-(dicyanomethylene)-2,6-bis[2-(julolidin-9-yl)ethenyl]-4H-pyran(abbreviation: BisDCJ),4-(dicyanomethylene)-2-methyl-6-(9-julolidyl)ethenyl-4H-pyran(abbreviation: DCM2),{2-isopropyl-6-[2-(2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTI), or{2,6-bis[2-(2,3,6,7-tetrahydro-8-methoxy-1,1,7,7-tetramethyl-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: BisDCJTM) is preferably used because of its highefficiency. In particular, DCJTI and BisDCJTM are preferable, as theyhave a light emission peak at around 620 nm.

Note that the light-emitting layer 1013 may have a structure in whichthe above substance having a light-emitting property (a guest material)is dispersed in another substance (a host material). As the substancewith which the substance having a high light-emitting property isdispersed, various kinds of materials can be used, and it is preferableto use a substance whose lowest unoccupied molecular orbital (LUMO)level is higher than that of a substance having a high light-emittingproperty and whose highest occupied molecular orbital (HOMO) level islower than that of the substance having a high light-emitting property.

As the substance with which the substance having a light-emittingproperty is dispersed, specifically, a metal complex such astris(8-quinolinolato)aluminum(III) (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq₂),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq₂),bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), orbis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ); aheterocyclic compound such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen), orbathocuproine (abbreviation: BCP); a condensed aromatic compound such as9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA),3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA),2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA),9,9′-bianthryl (abbreviation: BANT),9,9′-(stilbene-3,3′-diyl)diphenanthrene (abbreviation: DPNS),9,9′-(stilbene-4,4′-diyl)diphenanthrene (abbreviation: DPNS2),3,3′,3″-(benzene-1,3,5-triyl)tripyrene (abbreviation: TPB3),9,10-diphenylanthracene (abbreviation: DPAnth), or6,12-dimethoxy-5,11-diphenylchrysene; an aromatic amine compound such asN,N-dipheyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine(abbreviation: DPhPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA),N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine(abbreviation: PCAPBA),N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA), NPB (or α-NPD), TPD, DFLDPBi, or BSPB; or thelike can be used.

As a substance with which the substance having a light-emitting propertyis dispersed, a plurality of kinds of substances can be used. Forexample, in order to suppress crystallization, a substance such asrubrene which suppresses crystallization, may be further added. Inaddition, NPB, Alq, or the like may be further added in order toefficiently transfer energy to the substance having a light-emittingproperty.

When a structure in which the substance having a light-emitting propertyis dispersed in another substance is employed, crystallization of thelight-emitting layer 1013 can be suppressed. In addition, concentrationquenching which results from high concentration of the substance havinga light-emitting property can be suppressed.

The electron-transport layer 1014 is a layer including a substancehaving a high electron-transport property. As the substance having ahigh electron-transport property, for example, a layer containing ametal complex having a quinoline skeleton or a benzoquinoline skeleton,such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq₃),bis(10-hydroxybenzo[h]-quinolinato)beryllium (abbreviation: BeBq₂), orbis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation:BAlq) can be used. In addition, a metal complex or the like including anoxazole-based or thiazole-based ligand, such asbis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)₂) orbis[2-(2-hydroxyphenyl)benzothiazolato]zinc(II) (abbreviation: Zn(BTZ)₂)can be used. Besides the metal complexes,2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen),bathocuproine (abbreviation: BCP),bis[3-(1H-benzimidazol-2-yl)fluoren-2-olato]zinc(II),bis[3-(1H-benzimidazol-2-yl)fluoren-2-olato]beryllium(II),bis[2-(1H-benzimidazol-2-yl)dibenzo[b,d]furan-3-olato](phenolato)aluminum(III),bis[2-(benzoxazol-2-yl)-7,8-methylenedioxydibenzo[b,d]furan-3-olato](2-naphtholato)aluminum(III),or the like can also be used. The substances mentioned here are mainlyones that have an electron mobility higher than or equal to 10⁻⁶ cm²/Vs.Note that the electron-transport layer 1014 may be formed of substancesother than those described above as long as their electron-transportproperties are higher than their hole-transport properties. Theelectron-transport layer 1014 is not limited to a single layer and maybe a stacked layer which includes two or more layers each containing theaforementioned substance.

The electron-injection layer 1015 is a layer including a substancehaving a high electron-injection property. As the material having a highelectron-injection property, the following can be given: an alkali metalor an alkaline earth metal such as lithium fluoride (LiF), cesiumfluoride (CsF), and calcium fluoride (CaF₂), and a compound thereof. Itis also possible to use an electron-injection composite materialincluding an organic compound (preferably, an organic compound having anelectron-transport property) and an inorganic compound (preferably, analkali metal, an alkaline earth metal, a rare earth metal, or a compoundof these metals). As the electron-injection composite material, forexample, a layer made of Alq mixed with magnesium (Mg) may be used. Sucha structure increases the efficiency in electron injection from thecathode 1002.

Note that in the case where the electron-injection layer 1015 is made ofthe aforementioned electron-injection composite material, a variety ofconductive materials such as Al, Ag, ITO, or ITO containing silicon orsilicon oxide can be used for the cathode 1002 regardless of the workfunction.

Such layers are stacked in appropriate combination, whereby the EL layer1003 can be formed. The light-emitting layer 1013 may have astacked-layer structure including two or more layers. The light-emittinglayer 1013 has a stacked-layer structure including two or more layersand a different light-emitting substance is used for each light-emittinglayer, so that a variety of emission colors can be obtained. Inaddition, a plurality of light-emitting substances of different colorsis used as the light-emitting substance, whereby light emission having abroad spectrum or white light emission can also be obtained. Inparticular, for a backlight for which high luminance is required, astructure in which light-emitting layers are stacked is preferable.

Further, as a formation method of the EL layer 1003, a variety ofmethods (e.g., a dry process and a wet process) can be selected asappropriate depending on a material to be used. For example, a vacuumevaporation method, a sputtering method, an ink-jet method, a spincoating method, or the like can be used. Note that a different formationmethod may be employed for each layer.

The EL element 1025 described in this embodiment can be formed by any ofa variety of methods regardless of whether it is a dry process (e.g., avacuum evaporation method or a sputtering method) or a wet process(e.g., an ink-jet method or a spin coating method).

Note that the structure of the EL element 1025 described in thisembodiment may be a structure in which a plurality of EL layers 1003 arestacked between a pair of electrodes as illustrated in FIG. 11C, thatis, a stacked-layer element structure. Note that in the case of astructure in which n (n is a natural number of 2 or more) EL layers 1003are stacked, an intermediate layer 1004 is provided between an m-th (mis a natural number greater than or equal to 1 and less than or equal ton−1) EL layer and an (m+1)-th EL layer.

The intermediate layer 1004 has a function of injecting electrons to oneof the EL layers 1003 on the anode 1001 side formed in contact with theintermediate layer 1004, and injecting holes to the other EL layer 1003on the cathode 1002 side, when a voltage is applied to the anode 1001and the cathode 1002.

The intermediate layer 1004 can be made not only by using theaforementioned composite materials (the hole-injection compositematerial or the electron-injection composite material) of an organiccompound and an inorganic compound, but also by appropriately combiningmaterials such as metal oxides. More preferably, the intermediate layer1004 is made of a combination of the hole-injection composite materialand other materials. Such materials used for the intermediate layer 1004have an excellent carrier-injection property and carrier-transportproperty, whereby the EL element 1025 driven with low current and lowvoltage can be realized.

In a structure of the stacked-layer element, in the case where the ELlayer has a two-layer stacked structure, white color light can beextracted outside by allowing a first EL layer and a second EL layer toemit light of complementary colors. White light emission can also beobtained with a structure where the first EL layer and the second ELlayer each include a plurality of light-emitting layers emitting lightof complementary colors. As a complementary relation, blue and yellow,blue green and red, and the like can be given. A substance which emitslight of blue, yellow, blue-green, or red light may be selected asappropriate from, for example, the light-emitting substances givenabove.

The following is an example of a structure where each of the first ELlayer and the second EL layer includes a plurality of light-emittinglayers emitting light of complementary colors. With this structure,white light emission can be obtained.

For example, the first EL layer includes a first light-emitting layerexhibiting light emission with a spectrum whose peak is in thewavelength range of blue to blue-green, and a second light-emittinglayer exhibiting light emission with a spectrum whose peak is in thewavelength range of yellow to orange. The second EL layer includes athird light-emitting layer exhibiting light emission with a spectrumwhose peak is in the wavelength range of blue-green to green, and afourth light-emitting layer exhibiting light emission with a spectrumwhose peak is in the wavelength range of orange to red.

In this case, light emission from the first EL layer is a combination oflight emission from both the first light-emitting layer and the secondlight-emitting layer and thus exhibits a light emission spectrum havingpeaks both in the wavelength range of blue to blue-green and in thewavelength range of yellow to orange. That is, the first EL layerexhibits light emission having a 2-wavelength-type white color or a2-wavelength-type color that is similar to white.

In addition, light emission from the second EL layer is a combination oflight emission from both the third light-emitting layer and the fourthlight-emitting layer and thus exhibits a light emission spectrum havingpeaks both in the wavelength range of blue-green to green and in thewavelength range of orange to red. That is, the second EL layer exhibitslight emission having a 2-wavelength-type white color or a2-wavelength-type color that is similar to white, which is differentfrom the first EL layer.

Consequently, by combining the light-emission from the first EL layerand the light emission from the second EL layer, white light emissionwhich covers the wavelength range of blue to blue-green, the wavelengthrange of blue-green to green, the wavelength range of yellow to orange,and the wavelength range of orange to red can be obtained.

Note that in the structure of the above-mentioned stacked layer element,by provision of intermediate layers between the stacked EL layers, theelement can have long lifetime in a high-luminance region while thecurrent density is kept low. In addition, the voltage drop due toresistance of the electrode material can be reduced, whereby uniformlight emission in a large area is possible.

Note that the backlight portion described in FIGS. 10A to 10C and FIGS.11A to 11C may have a structure in which luminance is adjusted. Forexample, a structure in which luminance is adjusted in accordance withilluminance around the liquid crystal display device or a structure inwhich luminance is adjusted in accordance with a displayed image signalmay be employed.

Note that color display is enabled by combination of color filters.Alternatively, other optical films (such as a polarizing film, aretardation film, and an anti-reflection film) can also be used incombination. Note that the color filter is not always provided in thecase where light-emitting diodes of RGB or the like are arranged in abacklight and a successive additive color mixing method (a fieldsequential method) in which color display is performed by time divisionis employed.

Note that this embodiment can be freely combined with the otherembodiments.

Embodiment 4

In this embodiment, an example of a transistor that can be applied to aliquid crystal display device disclosed in this specification will bedescribed. There is no particular limitation on a structure of thetransistor that can be applied to the liquid crystal display devicedisclosed in this specification. For example, a staggered transistor, aplanar transistor, or the like having a top-gate structure in which agate electrode is placed on an upper side of an oxide semiconductorlayer with a gate insulating layer interposed or a bottom-gate structurein which a gate electrode is placed on a lower side of an oxidesemiconductor layer with a gate insulating layer interposed, can beused. The transistor may have a single gate structure including onechannel formation region, a double gate structure including two channelformation regions, or a triple gate structure including three channelformation regions. Alternatively, the transistor may have a dual gatestructure including two gate electrode layers placed over and below achannel region with a gate insulating layer interposed. FIGS. 12A to 12Dillustrate examples of cross-sectional structures of transistors. Eachof the transistors illustrated in FIGS. 12A to 12D uses an oxidesemiconductor as a semiconductor. An advantage of using an oxidesemiconductor is that field-effect mobility (the maximum value isgreater than or equal to 5 cm²/Vsec, preferably in the range of 10cm²/Vsec to 150 cm²/Vsec) can be obtained when a transistor is on, andlow off current (less than 1 aA/μm, preferably less than 10 zA/μm atroom temperature and less than 100 zA/μm at 85° C.) can be obtained whenthe transistor is off.

A transistor 410 illustrated in FIG. 12A is one of bottom-gatetransistors and is also referred to as an inverted staggered transistor.

The transistor 410 includes, over a substrate 400 having an insulatingsurface, a gate electrode layer 401, a gate insulating layer 402, anoxide semiconductor layer 403, a source electrode layer 405 a, and adrain electrode layer 405 b. An insulating film 407 is provided to coverthe transistor 410 and be stacked over the oxide semiconductor layer403. Further, a protective insulating layer 409 is formed over theinsulating film 407.

A transistor 420 illustrated in FIG. 12B is one of bottom-gatetransistors referred to as a channel-protective type (also referred toas a channel-stop type) and is also referred to as an inverted staggeredtransistor.

The transistor 420 includes, over the substrate 400 having an insulatingsurface, the gate electrode layer 401, the gate insulating layer 402,the oxide semiconductor layer 403, an insulating layer 427 functioningas a channel protective layer covering a channel formation region of theoxide semiconductor layer 403, the source electrode layer 405 a, and thedrain electrode layer 405 b. Further, the protective insulating layer409 is formed to cover the transistor 420.

A transistor 430 illustrated in FIG. 12C is a bottom-gate transistor andincludes, over the substrate 400 having an insulating surface, the gateelectrode layer 401, the gate insulating layer 402, the source electrodelayer 405 a, the drain electrode layer 405 b, and the oxidesemiconductor layer 403. The insulating film 407 is provided to coverthe transistor 430 and to be in contact with the oxide semiconductorlayer 403. Further, the protective insulating layer 409 is formed overthe insulating film 407.

In the transistor 430, the gate insulating layer 402 is provided overand in contact with the substrate 400 and the gate electrode layer 401;the source electrode layer 405 a and the drain electrode layer 405 b areprovided over and in contact with the gate insulating layer 402. Theoxide semiconductor layer 403 is provided over the gate insulating layer402, the source electrode layer 405 a, and the drain electrode layer 405b.

A transistor 440 illustrated in FIG. 12D is one of top-gate transistors.The transistor 440 includes, over the substrate 400 having an insulatingsurface, an insulating layer 437, the oxide semiconductor layer 403, thesource electrode layer 405 a, the drain electrode layer 405 b, the gateinsulating layer 402, and the gate electrode layer 401. A wiring layer436 a and a wiring layer 436 b are provided in contact with andelectrically connected to the source electrode layer 405 a and the drainelectrode layer 405 b respectively.

In this embodiment, the oxide semiconductor layer 403 is used as asemiconductor layer as described above. As an oxide semiconductor usedfor the oxide semiconductor layer 403, the following metal oxides can beused: a four-component metal oxide such as an In—Sn—Ga—Zn—O-based oxidesemiconductor; a three-component metal oxide such as an In—Ga—Zn—O-basedoxide semiconductor, an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, and aSn—Al—Zn—O-based oxide semiconductor; a two-component metal oxide suchas an In—Zn—O-based oxide semiconductor, a Sn—Zn—O-based oxidesemiconductor, an Al—Zn—O-based oxide semiconductor, a Zn—Mg—O-basedoxide semiconductor, a Sn—Mg—O-based oxide semiconductor, anIn—Mg—O-based oxide semiconductor; an In—O-based oxide semiconductor; aSn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor. Inaddition, SiO₂ may be contained in the above oxide semiconductor. Here,for example, an In—Ga—Zn—O-based oxide semiconductor means an oxide filmcontaining indium (In), gallium (Ga), and zinc (Zn), and there is noparticular limitation on the stoichiometric proportion thereof. TheIn—Ga—Zn—O-based oxide semiconductor may contain an element other thanIn, Ga, and Zn.

As the oxide semiconductor layer 403, a thin film expressed by achemical formula of InMO₃(ZnO)_(m) (m>0, where m is not an integer) canbe used. Here, M represents one or more metal elements selected from Ga,Al, Mn, and Co. For example, M can be Ga, Ga and Al, Ga and Mn, Ga andCo, or the like.

In each of the transistors 410, 420, 430, and 440 using the oxidesemiconductor layer 403, the current value in an off state (off currentvalue) can be reduced. Thus, the holding period of an electric signal ofan image signal or the like can be extended and an interval betweenwriting operations can be set longer in the state where power supply ison. Consequently, the frequency of refresh operation can be decreased,whereby power consumption can be effectively suppressed.

In addition, each of the transistors 410, 420, 430, and 440 using theoxide semiconductor layer 403 can operate at high speed becauserelatively high field-effect mobility can be obtained. Consequently,when the above transistors are used in a pixel portion of a liquidcrystal display device, color separation can be suppressed andhigh-quality images can be obtained. In addition, since the transistorscan be separately formed in a driver circuit portion and a pixel portionover one substrate, the number of components of the liquid crystaldisplay device can be reduced.

There is no limitation on a substrate that can be applied to thesubstrate 400 having an insulating surface; however, a glass substratesuch as a glass substrate made of barium borosilicate glass oraluminosilicate glass is used.

In the bottom-gate transistors 410, 420, and 430, an insulating filmserving as a base film may be provided between the substrate and thegate electrode layer. The base film has a function of preventingdiffusion of an impurity element from the substrate, and can be formedto have a stacked-layer structure using one or more of a silicon nitridefilm, a silicon oxide film, a silicon nitride oxide film, and a siliconoxynitride film.

The gate electrode layer 401 can be formed to have a single-layerstructure or a stacked-layer structure using a metal material such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium, or an alloy material which contains any of thesematerials as its main component.

The gate insulating layer 402 can be formed with a single-layerstructure or a layered structure using any of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, a silicon nitrideoxide layer, an aluminum oxide layer, an aluminum nitride layer, analuminum oxynitride layer, an aluminum nitride oxide layer, and ahafnium oxide layer by a plasma CVD method, a sputtering method, or thelike. For example, a silicon nitride layer (SiN_(y) (y>0)) having athickness of 50 nm to 200 nm inclusive is formed as a first gateinsulating layer with a plasma CVD method, and a silicon oxide layer(SiO_(x) (x>0)) having a thickness of 5 nm to 300 nm inclusive is formedas a second gate insulating layer over the first gate insulating layer,so that a gate insulating layer with a total thickness of 200 nm isformed.

As a conductive film used for the source electrode layer 405 a and thedrain electrode layer 405 b, for example, a metal film containing anelement selected from Al, Cr, Cu, Ta, Ti, Mo, and W and a metal nitridefilm containing any of the above elements as its main component (atitanium nitride film, a molybdenum nitride film, and a tungsten nitridefilm) can be used. A metal film having a high melting point of Ti, Mo,W, or the like or a metal nitride film of any of these elements (atitanium nitride film, a molybdenum nitride film, and a tungsten nitridefilm) may be stacked on one of or both of a lower side or an upper sideof a metal film of Al, Cu, or the like.

A material similar to that of the source electrode layer 405 a and thedrain electrode layer 405 b can be also used for a conductive film usedfor the wiring layer 436 a and the wiring layer 436 b which areconnected to the source electrode layer 405 a and the drain electrodelayer 405 b respectively.

The conductive film to be the source electrode layer 405 a and the drainelectrode layer 405 b (including a wiring layer formed using the samelayer as the source electrode layer 405 a and the drain electrode layer405 b) may be formed using a conductive metal oxide. As the conductivemetal oxide, indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO),an alloy of indium oxide and tin oxide (In₂O₃—SnO₂, referred to as ITO),an alloy of indium oxide and zinc oxide (In₂O₃—ZnO), and such a metaloxide material containing silicon oxide can be used.

As the insulating films 407, 427, and 437, an inorganic insulating filmsuch as a silicon oxide film, a silicon oxynitride film, an aluminumoxide film, or an aluminum oxynitride film can be typically used.

For the protective insulating layer 409 provided over the oxidesemiconductor layer, an inorganic insulating film such as a siliconnitride film, an aluminum nitride film, a silicon nitride oxide film, oran aluminum nitride oxide film can be used.

Further, a planarization insulating film may be formed over theprotective insulating layer 409 so that surface roughness due to thetransistor is reduced. As the planarization insulating film, an organicmaterial such as polyimide, acrylic, and benzocyclobutene can be used.Besides the above organic materials, a low-dielectric constant material(a low-k material) or the like can be used. Note that the planarizationinsulating film may be formed by stacking a plurality of insulatingfilms formed of any of these materials.

An example of a pixel in a liquid crystal display device using such atransistor is illustrated in FIG. 20 and FIG. 21. A structure of thepixel of the liquid crystal display device illustrated in FIG. 20 andFIG. 21 is an example of a vertical alignment (VA) liquid crystal pixel.The VA mode is a mode of controlling alignment of liquid crystalmolecules of a liquid crystal panel. The VA mode is a mode in whichliquid crystal molecules are aligned vertically to a panel surface whenno voltage is applied.

FIG. 20 illustrates a plan view of the pixel and FIG. 21 illustrates across-sectional view taken along a line A-B shown in FIG. 20. Note thatFIG. 20 illustrates a plan view of the substrate 400 over which atransistor 410 is formed, and FIG. 21 illustrates a structure in which acounter substrate 416 and a liquid crystal layer 414 are formed inaddition to a structure of the substrate 400 over which a transistor 410is formed. The following description will be given with reference toboth FIG. 20 and FIG. 21.

The transistors 410 a and 410 b have the same structure as that in FIG.12A and each include the gate electrode layer 401, the gate insulatinglayer 402, and the oxide semiconductor layer 403. The gate electrodelayer 401 is shared by the transistors 410 a and 410 b. When a pixel isprovided, the gate electrode layer 401 is formed to extend in onedirection. The oxide semiconductor layer 403 is provided to overlap withthe gate electrode layer 401 with the gate insulating layer 402interposed therebetween. The source electrode layer 405 a and the drainelectrode layer 405 b are provided on an upper side of the oxidesemiconductor layer 403 (note that here, the terms “the source electrodelayer 405 a” and “the drain electrode layer 405 b” are used forconvenience to distinguish electrodes in the transistor 410 (betweensource and drain)). The source electrode layer 405 a is extended indirection to get across the gate electrode layer 401. A planarizationfilm 421 is formed over the protective insulating layer 409 and a pixelelectrode 411 a and a pixel electrode 411 b are formed thereover. Thepixel electrode 411 a is connected to the transistor 410 a and the pixelelectrode 411 b is connected to the transistor 410 b. The pixelelectrode 411 a is connected to the drain electrode layer 405 b througha contact hole 412. The pixel electrode 411 b is connected thereto in asimilar manner. The pixel electrodes 411 a and 411 b are formed from atransparent electrode material such as indium tin oxide, zinc oxide, ortin oxide.

A storage capacitor 419 may be provided as appropriate. When the storagecapacitor 419 is provided, the storage capacitor 419 is formed usingcapacitor wiring layers 417 a and 417 b and capacitor electrode layers418 a and 418 b which are formed from the same layer as the gateelectrode layer 401. Between the capacitor wiring layers 417 a and 417 band the capacitor electrode layers 418 a and 418 b, the gate insulatinglayer 402 is extended to function as a dielectric, so that the storagecapacitors 419 a and 419 b are formed.

In FIG. 20, two subunits each of which includes a transistor and a pixelelectrode are combined to form one unit. That is, the pixel electrode411 a and the pixel electrode 411 b each form a subunit. In this case,the potential of the capacitor electrode layer 417 a is made differentfrom that of a capacitor electrode layer 417 b, so that the potential ofthe pixel electrode 411 a can be made different from that of the pixelelectrode 411 b. In other words, the potentials of the capacitorelectrode layers 417 a and 417 b are individually controlled, so thatalignment of liquid crystal is precisely controlled and a viewing anglecan be increased.

FIG. 21 illustrates a mode in which the substrate 400 and the countersubstrate 416 are overlapped with each other with the liquid crystallayer 414 therebetween. In the position of the counter substrate 416where the spacer 422 is formed, a light-shielding layer 423, a firstcoloring layer 424, a second coloring layer 425, a third coloring layer426, and the counter electrode 415 are formed. With this structure, theheight of a projected rib 428 to control alignment of liquid crystal ismade different from that of the spacer 422. Each of the pixel electrode411 and the counter electrode 415 is provided with an alignment film413. Alignment treatment for the alignment film 413 may be performed byan optical alignment method or a rubbing method.

Note that other than the VA mode, a twisted nematic (TN) mode, amulti-domain vertical alignment (MVA) mode, an in-plane switching (IPS)mode, a continuous pinwheel alignment (CPA) mode, a patterned verticalalignment (PVA) mode, or the like can be applied. As a liquid crystalphase of the liquid crystal layer 414, a nematic phase, a smectic phase,a cholesteric phase, a blue phase, or the like can be used.

In such a manner, by using a transistor including an oxide semiconductorlayer having high field-effect mobility and low off current in thisembodiment, a liquid crystal display device with low power consumptioncan be provided.

Embodiment 5

In this embodiment, examples of a transistor including an oxidesemiconductor layer and a manufacturing method thereof will be describedin detail below with reference to FIGS. 13A to 13E. The same portion asor a portion having a function similar to those in the above embodimentscan be formed in a manner similar to that described in the aboveembodiments, and also the steps similar to those in the aboveembodiments can be performed in a manner similar to that described inthe above embodiments, and repetitive description is omitted. Inaddition, detailed description of the same portions is not repeated.

FIGS. 13A to 13E illustrate an example of a cross-sectional structure ofa transistor. A transistor 510 illustrated in FIGS. 13A to 13E is aninverted staggered thin film transistor having a bottom gate structure,which is similar to the transistor 410 illustrated in FIG. 12A.

Hereinafter, a manufacturing process of the transistor 510 over asubstrate 505 is described with reference to FIGS. 13A to 13E.

First, a conductive film is formed over the substrate 505 having aninsulating surface, and then, a gate electrode layer 511 is formedthrough a first photolithography step. Note that a resist mask may beformed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

As the substrate 505 having an insulating surface, a substrate similarto the substrate 400 described in Embodiment 4 can be used. In thisembodiment, a glass substrate is used as the substrate 505.

An insulating film serving as a base film may be provided between thesubstrate 505 and the gate electrode layer 511. The base film has afunction of preventing diffusion of an impurity element from thesubstrate 505, and can be formed with a single-layer structure or astacked-layer structure using one or more of a silicon nitride film, asilicon oxide film, a silicon nitride oxide film, and a siliconoxynitride film.

The gate electrode layer 511 can be formed to have a single-layerstructure or a stacked-layer structure using any of a metal materialsuch as molybdenum, titanium, tantalum, tungsten, aluminum, copper,neodymium, or scandium, and an alloy material which includes any ofthese as a main component.

Next, a gate insulating layer 507 is formed over the gate electrodelayer 511. The gate insulating layer 507 can be formed by a plasma CVDmethod, a sputtering method, or the like to have a single layerstructure or a stacked-layer structure using any of a silicon oxidelayer, a silicon nitride layer, a silicon oxynitride layer, a siliconnitride oxide layer, an aluminum oxide layer, an aluminum nitride layer,an aluminum oxynitride layer, an aluminum nitride oxide layer, and ahafnium oxide layer.

For the oxide semiconductor in this embodiment, an oxide semiconductorwhich is made to be an i-type semiconductor or a substantially i-typesemiconductor by removing an impurity is used. Such a highly purifiedoxide semiconductor is highly sensitive to an interface state andinterface charges; thus, an interface between the oxide semiconductorlayer and the gate insulating layer is important. For that reason, thegate insulating layer that is to be in contact with a highly purifiedoxide semiconductor needs to have high quality.

For example, high-density plasma CVD using microwaves (e.g., with afrequency of 2.45 GHz) is preferably adopted because an insulating layercan be dense and have high withstand voltage and high quality. Thehighly purified oxide semiconductor and the high-quality gate insulatinglayer are in close contact with each other, whereby the interface statedensity can be reduced to obtain favorable interface characteristics.

Needless to say, another formation method such as a sputtering method ora plasma CVD method can be employed as long as the method enablesformation of a high-quality insulating layer as a gate insulating layer.Further, an insulating layer whose film quality and characteristics ofthe interface between the insulating layer and an oxide semiconductorare improved by heat treatment which is performed after formation of theinsulating layer may be formed as a gate insulating layer. In any case,any insulating layer may be used as long as the insulating layer hascharacteristics of enabling a reduction in interface state density ofthe interface between the insulating layer and an oxide semiconductorand formation of a favorable interface as well as having favorable filmquality as a gate insulating layer.

In order to contain hydrogen, a hydroxyl group, and moisture in the gateinsulating layer 507 and an oxide semiconductor film 530 as little aspossible, it is preferable to perform pretreatment for formation of theoxide semiconductor film 530. As the pretreatment, the substrate 505provided with the gate electrode layer 511 or a substrate 505 over whichthe gate electrode layer 511 and the gate insulating layer 507 areformed is preheated in a preheating chamber of a sputtering apparatus,whereby an impurity such as hydrogen or moisture adsorbed on thesubstrate 505 is removed and then, evacuation is performed. As anevacuation unit provided in the preheating chamber, a cryopump ispreferable. Note that this preheating treatment can be omitted. Further,the above preheating may be performed in a similar manner, on thesubstrate 505 in a state where a source electrode layer 515 a and adrain electrode layer 515 b have been formed thereover but an insulatinglayer 516 has not been formed yet.

Next, over the gate insulating layer 507, the oxide semiconductor film530 having a thickness greater than or equal to 2 nm and less than orequal to 200 nm, preferably greater than or equal to 5 nm and less thanor equal to 30 nm is formed (see FIG. 13A).

Note that before the oxide semiconductor film 530 is formed by asputtering method, powder substances (also referred to as particles ordust) which attach on a surface of the gate insulating layer 507 arepreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without applying a voltage to a target side, an RFpower source is used for application of a voltage to a substrate side inan argon atmosphere to generate plasma in the vicinity of the substrateto modify a surface. Note that instead of an argon atmosphere, anitrogen atmosphere, a helium atmosphere, an oxygen atmosphere, or thelike may be used.

As an oxide semiconductor for the oxide semiconductor film 530, theoxide semiconductor described in Embodiment 4 can be used. Further, SiO₂may be contained in the above oxide semiconductor. In this embodiment,the oxide semiconductor film 530 is deposited by a sputtering methodwith the use of an In—Ga—Zn—O-based oxide target. A cross-sectional viewat this stage is illustrated in FIG. 13A. Alternatively, the oxidesemiconductor film 530 can be formed by a sputtering method in a raregas (typically argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere containing a rare gas (typically argon) and oxygen.

The target used for formation of the oxide semiconductor film 530 by asputtering method is, for example, a metal oxide target containingIn₂O₃, Ga₂O₃, and ZnO at a composition ratio of 1:1:1[molar ratio], sothat an In—Ga—Zn—O film is formed. Without limitation to the materialand the component of the target, for example, a metal oxide targetcontaining In₂O₃, Ga₂O₃, and ZnO at 1:1:2 [molar ratio] may be used.

The filling factor of the metal oxide target is greater than or equal to90% and less than or equal to 100%, preferably greater than or equal to95% and less than or equal to 99.9%. With use of the metal oxide targetwith high filling factor, a dense oxide semiconductor film can beformed.

It is preferable that a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or a hydride has been removed be usedas a sputtering gas used for forming the oxide semiconductor film 530.

The substrate is held in a deposition chamber kept under reducedpressure, and the substrate temperature is set to 100° C. to 600° C.inclusive, preferably 200° C. to 400° C. inclusive. Formation of theoxide semiconductor film is conducted with heating the substrate,whereby the concentration of impurities included in the formed oxidesemiconductor film can be reduced. In addition, damage by sputtering canbe reduced. Then, a sputtering gas from which hydrogen and moisture areremoved is introduced into the deposition chamber where remainingmoisture is being removed, and the oxide semiconductor film 530 isdeposited with use of the above target, over the substrate 505. In orderto remove remaining moisture from the deposition chamber, anadsorption-type vacuum pump such as a cryopump, an ion pump, or atitanium sublimation pump is preferably used. The evacuation unit may bea turbo pump provided with a cold trap. In the deposition chamber whichis evacuated with use of the cryopump, a hydrogen atom, a compoundincluding a hydrogen atom, such as water (H₂O), (more preferably, also acompound including a carbon atom), and the like are removed, whereby theconcentration of impurities in the oxide semiconductor film formed inthe deposition chamber can be reduced.

As one example of the deposition condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, thedirect-current (DC) power source is 0.5 kW, and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow rate is 100%). Notethat use of a pulse direct current power source is preferable becausepowder substances (also referred to as particles or dust) generated infilm formation can be reduced and the film thickness can be uniform.

Then, through a second photolithography step, the oxide semiconductorfilm 530 is processed into an island-shaped oxide semiconductor layer. Aresist mask for forming the island-shaped oxide semiconductor layer maybe formed by an ink jet method. Formation of the resist mask by aninkjet method needs no photomask; thus, manufacturing cost can bereduced.

In the case where a contact hole is formed in the gate insulating layer507, a step of forming the contact hole can be performed at the sametime as processing of the oxide semiconductor film 530.

Note that the etching of the oxide semiconductor film 530 may be dryetching, wet etching, or both dry etching and wet etching. As an etchantused for wet etching of the oxide semiconductor film 530, for example, amixed solution of phosphoric acid, acetic acid, and nitric acid, such asITO07N (produced by KANTO CHEMICAL CO., INC.) can be used.

Next, the oxide semiconductor layer is subjected to first heattreatment. By this first heat treatment, the oxide semiconductor layercan be dehydrated or dehydrogenated. The temperature of the first heattreatment is higher than or equal to 400° C. and lower than or equal to750° C., preferably higher than or equal to 400° C. and lower than thestrain point of the substrate. Here, the substrate is introduced into anelectric furnace which is one of heat treatment apparatuses, heattreatment is performed on the oxide semiconductor layer in a nitrogenatmosphere at 450° C. for one hour, and then, the oxide semiconductorlayer is not exposed to the air so that entry of water and hydrogen intothe oxide semiconductor layer is prevented; thus, an oxide semiconductorlayer 531 is obtained (see FIG. 13B).

Further, a heat treatment apparatus used in this step is not limited toan electric furnace, and a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element may be alternatively used. For example, anRTA (rapid thermal anneal) apparatus such as a GRTA (gas rapid thermalanneal) apparatus or an LRTA (lamp rapid thermal anneal) apparatus canbe used. An LRTA apparatus is an apparatus for heating an object to beprocessed by radiation of light (an electromagnetic wave) emitted from alamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, acarbon arc lamp, a high pressure sodium lamp, or a high pressure mercurylamp. A GRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the high temperature gas, an inert gas whichdoes not react with an object to be processed by heat treatment, such asnitrogen or a rare gas like argon, is used.

For example, as the first heat treatment, GRTA may be performed asfollows: the substrate is transferred and put into an inert gas heatedto a high temperature as high as 650° C. to 700° C., heated for severalminutes, and taken out from the inert gas heated to the hightemperature.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not contained in the atmosphere of nitrogen ora rare gas such as helium, neon, or argon. The purity of nitrogen or therare gas such as helium, neon, or argon which is introduced into theheat treatment apparatus is preferably set to be 6N (99.9999%) orhigher, far preferably 7N (99.99999%) or higher (that is, the impurityconcentration is preferably 1 ppm or lower, far preferably 0.1 ppm orlower).

After the oxide semiconductor layer is heated by the first heattreatment, a high-purity oxygen gas, a high-purity N₂O gas, or ultra-dryair (having a dew point of −40° C. or lower, preferably −60° C. orlower) may be introduced into the same furnace. It is preferable thatwater, hydrogen, or the like be not contained in the oxygen gas or theN₂O gas. Alternatively, the purity of an oxygen gas or an N₂O gas whichis introduced into the heat treatment apparatus is preferably 6N ormore, further preferably 7N or more (i.e., the impurity concentration ofthe oxygen gas or the N₂O gas is 1 ppm or lower, preferably 0.1 ppm orlower). Although oxygen which is a main component included in the oxidesemiconductor has been reduced through the elimination of impurities byperformance of dehydration treatment or dehydrogenation treatment,oxygen is supplied by the effect of introduction of the oxygen gas orthe N₂O gas in the above manner, so that the oxide semiconductor layeris highly purified and made to be an electrically i-type (intrinsic)semiconductor.

Alternatively, the first heat treatment of the oxide semiconductor layercan be performed on the oxide semiconductor film 530 which has not yetbeen processed into the island-shaped oxide semiconductor layer. In thatcase, the substrate is taken out from the heat apparatus after the firstheat treatment, and then a photolithography step is performed.

Note that other than the above timing, the first heat treatment may beperformed at any of the following timings as long as it is after theoxide semiconductor layer is formed. For example, the timing may beafter a source electrode layer and a drain electrode layer are formedover the oxide semiconductor layer or after an insulating layer isformed over the source electrode layer and the drain electrode layer.

Further, in the case where a contact hole is formed in the gateinsulating layer 507, the formation of the contact hole may be performedbefore or after the first heat treatment is performed on the oxidesemiconductor film 530.

Alternatively, an oxide semiconductor layer may be formed through twodeposition steps and two heat treatment steps. The thus formed oxidesemiconductor layer has a thick crystalline region (non-single-crystalregion), that is, a crystalline region the c-axis of which is aligned ina direction perpendicular to a surface of the layer, even when a basecomponent includes any of an oxide, a nitride, a metal, or the like. Forexample, a first oxide semiconductor film with a thickness greater thanor equal to 3 nm and less than or equal to 15 nm is deposited, and firstheat treatment is performed in a nitrogen, oxygen, rare gas, or dry airatmosphere at 450° C. to 850° C. inclusive, preferably 550° C. to 750°C. inclusive, so that the first oxide semiconductor film has acrystalline region (including a plate-like crystal) in a regionincluding its surface. Then, a second oxide semiconductor film which hasa larger thickness than the first oxide semiconductor film is formed,and second heat treatment is performed at 450° C. to 850° C. inclusiveor preferably 600° C. to 700° C. inclusive, so that crystal growthproceeds upward with use of the first oxide semiconductor film as a seedof the crystal growth and the whole second oxide semiconductor film iscrystallized. In such a manner, the oxide semiconductor layer having athick crystalline region may be obtained.

Next, a conductive film to be the source and drain electrode layers(including a wiring formed in the same layer as the source and drainelectrode layers) is formed over the gate insulating layer 507 and theoxide semiconductor layer 531. The conductive film to be the source anddrain electrode layers can be formed using the material which is usedfor the source electrode layer 405 a and the drain electrode layer 405 bdescribed in Embodiment 4.

By performance of a third photolithography step, a resist mask is formedover the conductive film, and selective etching is performed, so thatthe source electrode layer 515 a and the drain electrode layer 515 b areformed. Then, the resist mask is removed (see FIG. 13C).

Light exposure at the time of the formation of the resist mask in thethird photolithography step may be performed using ultraviolet light,KrF laser light, or ArF laser light. A channel length L of thetransistor formed later is determined by the distance between the loweredge portion of the source electrode layer and the lower edge portion ofthe drain electrode layer which are next to each other over the oxidesemiconductor layer 531. In the case where a channel length L is lessthan 25 nm, light exposure for formation of the resist mask in the thirdphotolithography step may be performed using extreme ultraviolet lighthaving an extremely short wavelength of several nanometers to severaltens of nanometers. In the light exposure by extreme ultraviolet light,the resolution is high and the focus depth is large. For these reasons,the channel length L of the transistor to be formed later can be in therange of 10 nm to 1000 nm inclusive, and the circuit can operate athigher speed.

In order to reduce the number of photomasks used in a photolithographystep and reduce the number of steps, an etching step may be performedwith the use of a multi-tone mask which is a light-exposure mask throughwhich light is transmitted to have a plurality of intensities. A resistmask formed with use of a multi-tone mask has a plurality of thicknessesand further can be changed in shape by etching; therefore, the resistmask can be used in a plurality of etching steps for processing intodifferent patterns. Therefore, a resist mask corresponding to at leasttwo or more kinds of different patterns can be formed with onemulti-tone mask. Thus, the number of light-exposure masks can be reducedand the number of corresponding photolithography steps can be alsoreduced, whereby simplification of a process can be realized.

Note that when the conductive film is etched, the optimum etchingcondition is desirably made so that the oxide semiconductor layer 531can be prevented to be etched together with the conductive film anddivided. However, it is difficult to attain such a condition that onlythe conductive film is etched and the oxide semiconductor layer 531 isnot etched at all. In etching of the conductive film, the oxidesemiconductor layer 531 is partly etched in some cases, whereby theoxide semiconductor layer having a groove portion (a depressed portion)is formed.

In this embodiment, since a titanium (Ti) film is used as the conductivefilm and the In—Ga—Zn—O-based oxide semiconductor is used for the oxidesemiconductor layer 531, an ammonium hydrogen peroxide mixture (31 wt. %hydrogen peroxide water:28 wt. % ammonia water:water=5:2:2) is used asan etchant of the Ti film.

Next, by plasma treatment using a gas such as N₂O, N₂, or Ar, water orthe like adsorbed to a surface of an exposed portion of the oxidesemiconductor layer may be removed. In the case where the plasmatreatment is performed, the insulating layer 516 which serves as aprotective insulating film in contact with part of the oxidesemiconductor layer is formed without exposure to the air.

The insulating layer 516 can be formed to a thickness of at least 1 nmby a method by which an impurity such as water or hydrogen does notenter the insulating layer 516, such as a sputtering method asappropriate. When hydrogen is contained in the insulating layer 516, thehydrogen enters the oxide semiconductor layer or extracts oxygen fromthe oxide semiconductor layer, which causes a reduction in resistance ofa back channel of the oxide semiconductor layer (i.e., makes an n-typeback channel), so that a parasitic channel might be formed. Therefore,it is important for the insulating layer 516 that hydrogen is not usedin a formation method in order to contain hydrogen as little aspossible.

In this embodiment, a silicon oxide film is formed to a thickness of 200nm as the insulating layer 516 by a sputtering method. The substratetemperature in film formation may be higher than or equal to roomtemperature and lower than or equal to 300° C. and in this embodiment,is 100° C. The silicon oxide film can be formed by a sputtering methodin a rare gas (typically argon) atmosphere, an oxygen atmosphere, or amixed atmosphere containing a rare gas and oxygen. As a target, asilicon oxide target or a silicon target may be used. For example, thesilicon oxide film can be formed using a silicon target by a sputteringmethod in an atmosphere containing oxygen. As the insulating layer 516which is formed in contact with the oxide semiconductor layer, aninorganic insulating film which does not include an impurity such asmoisture, a hydrogen ion, or OH⁻ and blocks the entry of the impurityfrom the outside is used. Typically, a silicon oxide film, a siliconoxynitride film, an aluminum oxide film, an aluminum oxynitride film, orthe like is used.

As in the case of formation of the oxide semiconductor film 530, anadsorption-type vacuum pump (such as a cryopump) is preferably used inorder to remove remaining moisture in a deposition chamber of theinsulating layer 516. When the insulating layer 516 is deposited in thedeposition chamber which is evacuated with use of a cryopump, theconcentration of an impurity contained in the insulating layer 516 canbe reduced. Alternatively, the evacuation unit used for removal of theremaining moisture in the deposition chamber may be a turbo pumpprovided with a cold trap.

It is preferable that a high-purity gas from which impurities such ashydrogen, water, a hydroxyl group, or a hydride have been removed beused as a sputtering gas used for forming the insulating layer 516.

Next, second heat treatment is performed in an inert gas atmosphere oran oxygen gas atmosphere (preferably at from 200° C. to 400° C., e.g.250° C. to 350° C. inclusive). For example, the second heat treatment isperformed in a nitrogen atmosphere at 250° C. for one hour. The secondheat treatment is performed in such a condition that part (a channelformation region) of the oxide semiconductor layer is in contact withthe insulating layer 516.

As described above, an impurity such as hydrogen, moisture, a hydroxylgroup, or a hydride (also referred to as a hydrogen compound) isintentionally removed from the oxide semiconductor layer by subjectingthe oxide semiconductor layer to the first heat treatment, and thenoxygen which is one of main components of the oxide semiconductor can besupplied because oxygen has been reduced in the step of removingimpurities. Through the above steps, the oxide semiconductor layer ishighly purified and is made to be an electrically i-type (intrinsic)semiconductor.

Through the above process, the transistor 510 is formed (see FIG. 13D).

When a silicon oxide layer having a lot of defects is used as theinsulating layer 516, an impurity such as hydrogen, moisture, a hydroxylgroup, or a hydride contained in the oxide semiconductor layer can bediffused by the heat treatment which is performed after the formation ofthe silicon oxide layer, so that impurities in the oxide semiconductorlayer can be further reduced.

A protective insulating layer 506 may be formed over the insulatinglayer 516. For example, a silicon nitride film is formed by an RFsputtering method. Since an RF sputtering method has high productivity,it is a preferable method used for formation of the protectiveinsulating layer. As the protective insulating layer, an inorganicinsulating film which does not include an impurity such as moisture andblocks entry of the impurity from the outside, e.g., a silicon nitridefilm, an aluminum nitride film, or the like is used. In this embodiment,the protective insulating layer 506 is formed using a silicon nitridefilm (see FIG. 13E).

In this embodiment, as the protective insulating layer 506, a siliconnitride film is formed by heating the substrate 505 over which the stepsup to and including the formation step of the insulating layer 516 havebeen done, to a temperature of 100° C. to 400° C., introducing asputtering gas including high-purity nitrogen from which hydrogen andmoisture are removed, and using a silicon semiconductor target. In thatcase also, it is preferable that remaining moisture be removed from adeposition chamber in the formation of the protective insulating layer506 as in the case of the insulating layer 516.

After the formation of the protective insulating layer, heat treatmentmay be further performed at a temperature from 100° C. to 200° C.inclusive in the air for 1 hour to 30 hours inclusive. This heattreatment may be performed at a fixed heating temperature.Alternatively, the following change in the heating temperature may beconducted plural times repeatedly: the heating temperature is increasedfrom room temperature to a temperature of 100° C. to 200° C. inclusiveand then decreased to room temperature.

A transistor including a highly purified oxide semiconductor layer whichis manufactured in accordance with this embodiment as described achieveshigh filed-effect mobility and thus can operate at high speed. When thetransistor including a highly purified oxide semiconductor layer is usedin a pixel portion in the liquid crystal display device, colorseparation can be suppressed and a high-quality image can be provided.In addition, by using the transistors including a highly purified oxidesemiconductor layer, a driver circuit portion and a pixel portion areformed over one substrate; thus, the number of components of the liquidcrystal display device can be reduced.

Measurement results of the field-effect mobility of a transistorincluding a highly purified oxide semiconductor are described.

In accordance with the above manufacturing method of this embodiment, atransistor (L/W=10 μm/50 μm) including a highly purified oxidesemiconductor (an In—Ga—Zn—O-based oxide semiconductor film with athickness of 50 nm) was manufactured, and a change in characteristics ofsource-drain current (hereinafter, referred to as drain current orI_(d)) was measured under conditions that the substrate temperature wasset to room temperature, source-drain voltage (hereinafter, referred toas drain voltage or V_(d)) was set to 10 V, and source-gate voltage(hereinafter, referred to as gate voltage or V_(g)) was changed from −30V to +30 V. That is, V_(g)-I_(d) characteristics were measured. Notethat in FIG. 14, the range of V_(g) is from −5 V to +30 V. From FIG. 14,the maximum value of field-effect mobility of the transistor including ahighly purified oxide semiconductor layer can be confirmed to be 10.7cm²/Vsec.

Further, the transistor including a highly purified oxide semiconductorcan achieve further a reduction in the current value in an off state(off-current value). Therefore, the holding period of an electric signalof an image signal or the like can be extended and an interval betweenwriting operations can be set longer. Thus, the frequency of refreshoperation can be reduced, whereby a decrease in consumed power can bemore effectively improved.

In addition, measurement results of the off current of a transistorincluding a highly purified oxide semiconductor are described.

In accordance with the above manufacturing method of this embodiment, atransistor including a highly purified oxide semiconductor wasmanufactured. First, a transistor with a sufficiently large channelwidth W of 1 cm was prepared in consideration of the very small offcurrent of the transistor including a highly purified oxidesemiconductor, and the off current was measured. FIG. 15 shows themeasurement results of the off current of the transistor with a channelwidth W of 1 cm. In FIG. 15, the horizontal axis indicates the gatevoltage V_(g) and the vertical axis indicates the drain current I_(d).In the case where the drain voltage V_(d) is +1 V or +10 V, the offcurrent of the transistor with the gate voltage V_(g) within the rangeof −5 V to −20 V was found to be smaller than or equal to 1×10⁻¹³ Awhich is the detection limit. Moreover, it was found that the offcurrent of the transistor (per unit channel width (1 μm)) was smallerthan or equal to 10 aA/μm (1×10⁻¹⁷ A/μm).

Next, more accurate measurement results of the off current of thetransistor including a highly purified oxide semiconductor aredescribed. As described above, the off current of the transistorincluding a highly purified oxide semiconductor was found to be smallerthan or equal to 1×10⁻¹³ A which is the detection limit of measurementequipment. Thus, more accurate off current (the value smaller than orequal to the detection limit of measurement equipment in the abovemeasurement) was measured with use of a test element group (TEG). Theresults thereof will be described.

The test element group used in the current measurement is describedbelow.

As the test element group, three measurement systems which are connectedin parallel are used. Each measurement system includes a capacitor, afirst transistor, a second transistor, a third transistor, and a fourthtransistor. The first to fourth transistors were manufactured inaccordance with this embodiment, and each transistor had the samestructure as the transistor 510 illustrated in FIG. 13D.

In each measurement system, one of a source terminal and a drainterminal of the first transistor, one of terminals of the capacitor, andone of a source terminal and a drain terminal of the second transistorare connected to a power supply (for supplying V2). The other of thesource terminal and the drain terminal of the first transistor, one of asource terminal and a drain terminal of the third transistor, the otherof the terminals of the capacitor, and a gate terminal of the secondtransistor are connected to one another. The other of a source terminaland a drain terminal of the third transistor, one of a source terminaland a drain terminal of the fourth transistor, and a gate terminal ofthe fourth transistor are connected to a power supply (for supplyingV1). The other of the source terminal and the drain terminal of thesecond transistor, the other of the source terminal and the drainterminal of the fourth transistor are connected to an output terminal.

A potential V_(ext_b2) for controlling whether to turn on or off thefirst transistor is supplied to the gate terminal of the firsttransistor. A potential V_(ext_b1) for controlling whether to turn on oroff the third transistor is supplied to the gate terminal of the thirdtransistor. A potential V_(out) is output from the output terminal.

Then, the measurement of the off current with use of the abovemeasurement systems is described.

In order to measure the off current, the potential difference is appliedin an initialization period, and after a measurement period is started,potential of the gate terminal of the second transistor varies overtime. Accordingly, potential of the output potential V_(out) of theoutput terminal varies over time. Then, the off current can becalculated with the thus obtained output potential V_(out).

Each of the first to fourth transistors is a transistor including ahighly purified oxide semiconductor with a channel length L of 10 μm anda channel width W of 50 μm. In the three measurement systems arranged inparallel, the capacitance value of the capacitor in the firstmeasurement system was 100 fF, the capacitance value of the capacitor inthe second measurement system was 1 pF, and the capacitance value of thecapacitor in the third measurement system was 3 pF.

Note that V_(dd) was 5 V and V_(ss) was 0 V in the measurement of theoff current. In the measurement period, V_(out) was measured for aperiod of 100 msec only during which V1 was set to V_(dd), while thepotential V1 was basically set to V_(ss). The measurements wereconducted every 10 to 300 seconds. Further, Δt used in calculation ofcurrent I which flows through the element was about 30000 sec.

FIG. 16 shows the off current which was calculated in the above currentmeasurement. FIG. 16 further shows the relationship between source-drainvoltage V and off current I. According to FIG. 16, the off current wasabout 40 zA/μm under the condition that the source-drain voltage was 4V. In addition, the off current was less than or equal to 10 zA/μm underthe condition that the source-drain voltage was 3.1 V. Note that 1 zArepresents 10⁻²¹ A.

According to this embodiment, it was confirmed that the off current canbe sufficiently small in a transistor including a highly purified oxidesemiconductor.

Embodiment 6

In this embodiment, with the use of a display device which switches animage for a left eye and an image for a right eye at high speed, anexample in which a 3D image which is a moving image or a still image isseen with dedicated glasses with which videos of the display device aresynchronized is described with reference to FIGS. 17A and 17B.

FIG. 17A illustrates an external view in which a display device 2711 anddedicated glasses 2701 are connected to each other with a cable 2703. Inthe dedicated glasses 2701, shutters provided in a panel 2702 a for aleft eye and a panel 2702 b for a right eye are alternately opened andclosed, whereby a user can see an image of the display device 2711 as a3D image.

In addition, FIG. 17B is a block diagram illustrating a main structureof the display device 2711 and the dedicated glasses 2701.

The display device 2711 illustrated in FIG. 17B includes a displaycontrol circuit 2716, a display portion 2717, a timing generator 2713, asource line driver circuit 2718, an external operation unit 2722, and agate line driver circuit 2719. Note that an output signal changes inaccordance with operation by the external operation unit 2722 such as akeyboard.

In the timing generator 2713, a start pulse signal and the like areformed, and a signal for synchronizing an image for a left eye and theshutter of the panel 2702 a for a left eye, a signal for synchronizingan image for a right eye and the shutter of the panel 2702 b for a righteye, and the like are formed.

A synchronization signal 2731 a of the image for a left eye is input tothe display control circuit 2716, so that the image for a left eye isdisplayed on the display portion 2717. At the same time, asynchronization signal 2730 a for opening the shutter of the panel 2702a for a left eye is input to the panel 2702 a for a left eye. Inaddition, a synchronization signal 2731 b of the image for a right eyeis input to the display control circuit 2716, so that the image for aright eye is displayed on the display portion 2717. At the same time, asynchronization signal 2730 b for opening the shutter of the panel 2702b for a right eye is input to the panel 2702 b for a right eye.

Since an image for a left eye and an image for a right eye are switchedat high speed, the display device 2711 preferably employs a successivecolor mixing method (a field sequential method) in which color displayis performed by time division with use of light-emitting diodes (LEDs).

Further, since a field sequential method is employed, it is preferablethat the timing generator 2713 input the synchronization signals 2730 aand 2730 b to the backlight portion of the light-emitting diodes. Notethat the backlight portion includes LEDs of R, G, and B colors.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 7

A liquid crystal display device disclosed in this specification can beapplied to a variety of electronic devices (including game machines).Examples of electronic devices are a television set (also referred to asa television or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game machine, aportable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, and the like.Examples of electronic devices each including the liquid crystal displaydevice described in any of the above embodiments are described.

FIG. 18A illustrates an electronic book reader (also referred to as ane-book reader), which includes a housing 9630, a display portion 9631,operation keys 9632, a solar cell 9633, and a charge and dischargecontrol circuit 9634. The e-book reader illustrated in FIG. 18A has afunction of displaying various kinds of information (e.g., a stillimage, a moving image, and a text image) on the display portion, afunction of displaying a calendar, a date, the time, or the like on thedisplay portion, a function of operating or editing the informationdisplayed on the display portion, a function of controlling processingby various kinds of software (programs), and the like. Note that, inFIG. 18A, the charge and discharge control circuit 9634 has a battery9635 and a DCDC converter (hereinafter, abbreviated as a converter) 9636as an example. When the liquid crystal display device described in anyof Embodiments 1 to 6 is applied to the display portion 9631, an e-bookreader which consumes less power can be provided.

In the case of using a transflective or reflective liquid crystaldisplay device as the display portion 9631 in the structure illustratedin FIG. 18A, the e-book reader is assumed to be used in a comparativelybright environment. In that case, power generation by the solar cell9633 and charge by the battery 9635 can be effectively performed, whichis preferable. Since the solar cell 9633 can be provided on a space (asurface or a rear surface) of the housing 9630 as appropriate, thebattery 9635 can be efficiently charged, which is preferable. Note thatusing a lithium ion battery as the battery 9635 has the advantage ofdownsizing can be achieved, for example.

A configuration and operation of the charge and discharge controlcircuit 9634 illustrated in FIG. 18A is described with reference to ablock diagram of FIG. 18B. FIG. 18B shows the solar cell 9633, thebattery 9635, the converter 9636, a converter 9637, switches SW1 to SW3,and the display portion 9631. The charge and discharge control circuit9634 includes the battery 9635, the converter 9636, the converter 9637,and the switches SW1 to SW3.

First, an example of operation of when the solar cell 9633 generatespower by using external light is described. The power generated by thesolar cell is raised or lowered by the converter 9636 to be the voltagewhich is stored in the battery 9635. When the power from the solar cell9633 is used for operation of the display portion 9631, the switch SW1is turned on and the power is raised or lowered by the converter 9637 tobe the voltage needed for the display portion 9631. When display is notperformed on the display portion 9631, the switch SW1 may be turned offand the switch SW2 may be turned on, whereby the battery 9635 ischarged.

Next, an example of operation of when the solar cell 9633 does notgenerate power by using external light is described. The power stored inthe battery 9635 is raised or lowered by the converter 9637 when theswitch SW3 is turned on. Then, the power from the battery 9635 is usedfor operation of the display portion 9631.

Note that the solar cell 9633 is described as an example of a chargingunit here; however, charging the battery 9635 may be performed byanother unit. Alternatively, a combination of another charging unit maybe used.

FIG. 19 illustrates a laptop personal computer, which includes a mainbody 3001, a housing 3002, a display portion 3003, a keyboard 3004, andthe like. When the liquid crystal display device described in any ofEmbodiments 1 to 6 is applied to the display portion 3003, powerconsumption in a laptop personal computer can be small.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

This application is based on Japanese Patent Application serial no.2010-012665 filed with Japan Patent Office on Jan. 24, 2010, the entirecontents of which are hereby incorporated by reference.

The invention claimed is:
 1. A semiconductor device comprising: a liquidcrystal display panel comprising a first transistor connected to a pixelelectrode; a driver circuit electrically connected to the firsttransistor, the driver circuit comprising a second transistor; and animage processing circuit, wherein the image processing circuit isoperable to output a control signal including an information on whetheran image signal is for a moving image or a still image, wherein thedriver circuit is operable to receive the control signal and to controla signal provided to the first transistor to place a potential of thepixel electrode in a floating state when the image signal is for a stillimage, wherein the first transistor comprises a first oxidesemiconductor layer, and wherein an off current per micrometer of achannel width of the first transistor is lower than 10 zA/μm at roomtemperature in a range of a voltage for driving liquid crystal moleculesof the liquid crystal display panel.
 2. The semiconductor deviceaccording to claim 1, wherein the first oxide semiconductor layercomprises a crystalline region.
 3. The semiconductor device according toclaim 1, wherein the first oxide semiconductor layer comprises a c-axisaligned crystalline region.
 4. The semiconductor device according toclaim 1, wherein the first oxide semiconductor layer comprises adepressed portion.
 5. The semiconductor device according to claim 1,wherein the first oxide semiconductor layer comprises indium, gallium,and zinc.
 6. The semiconductor device according to claim 1, wherein thesecond transistor comprises a second oxide semiconductor layercomprising indium, gallium, and zinc.
 7. The semiconductor deviceaccording to claim 1, wherein the first transistor has an off currentper micrometer of a channel width is lower than 100 zA/μm at 85° C. 8.The semiconductor device according to claim 1, wherein an alignment modeof liquid crystal molecules in the liquid crystal display panel is anyone of a twisted nematic (TN), a vertical alignment (VA) mode, amulti-domain vertical alignment (MVA) mode, an in-plane switching (IPS)mode, a continuous pinwheel alignment (CPA) mode, and a patternedvertical alignment (PVA) mode.
 9. The semiconductor device according toclaim 1, wherein the liquid crystal display panel further comprises alighting unit comprising a light-emitting diode.
 10. A semiconductordevice comprising: a liquid crystal display panel comprising a firsttransistor connected to a pixel electrode; a driver circuit electricallyconnected to the first transistor, the driver circuit comprising asecond transistor; and an image processing circuit, wherein the imageprocessing circuit is operable to output a control signal including aninformation on whether an image signal is for a moving image or a stillimage, wherein the driver circuit is operable to receive the controlsignal and to control a signal provided to the first transistor to placea potential of the pixel electrode in a floating state when the imagesignal is for a still image, wherein the first transistor comprises afirst oxide semiconductor layer and a second oxide semiconductor layerover the first oxide semiconductor layer, and wherein an off current permicrometer of a channel width of each of the first transistor and thesecond transistor is lower than 10 zA/μm at room temperature in a rangeof a voltage for driving liquid crystal molecules of the liquid crystaldisplay panel.
 11. The semiconductor device according to claim 10,wherein the second oxide semiconductor layer comprises a crystallineregion.
 12. The semiconductor device according to claim 10, wherein thesecond oxide semiconductor layer comprises a c-axis aligned crystallineregion.
 13. The semiconductor device according to claim 10, wherein thesecond oxide semiconductor layer comprises a depressed portion.
 14. Thesemiconductor device according to claim 10, wherein the second oxidesemiconductor layer comprises indium, gallium, and zinc.
 15. Thesemiconductor device according to claim 10, wherein the secondtransistor comprises a third oxide semiconductor layer comprisingindium, gallium, and zinc.
 16. The semiconductor device according toclaim 10, wherein the first transistor has an off current per micrometerof a channel width is lower than 100 zA/μm at 85° C.
 17. Thesemiconductor device according to claim 10, wherein an alignment mode ofliquid crystal molecules in the liquid crystal display panel is any oneof a twisted nematic (TN), a vertical alignment (VA) mode, amulti-domain vertical alignment (MVA) mode, an in-plane switching (IPS)mode, a continuous pinwheel alignment (CPA) mode, and a patternedvertical alignment (PVA) mode.
 18. The semiconductor device according toclaim 10, wherein the liquid crystal display panel further comprises alighting unit comprising a light-emitting diode.
 19. A semiconductordevice comprising: a first transistor connected to a pixel electrode; adriver circuit electrically connected to the first transistor, thedriver circuit comprising a second transistor; and an image processingcircuit, wherein the image processing circuit is operable to output acontrol signal including an information on whether an image signal isfor a moving image or a still image, wherein the driver circuit isoperable to receive the control signal and to control a signal providedto the first transistor to place a potential of the pixel electrode in afloating state when the image signal is for a still image, wherein thefirst transistor comprises a first oxide semiconductor layer, andwherein an off current per micrometer of a channel width of the firsttransistor is lower than 10 zA/μm at room temperature.